Global to push GA events into
skip to main content

Title: Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
Inventors:
Issue Date:
OSTI Identifier:
1330348
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
9,477,040
Application Number:
14/801,257
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Jul 16
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Optical analog-to-digital converter
patent, July 2009

Optical NAND gate
patent, August 2011

Optical NOR gate
patent, September 2011

Optical set-reset latch
patent, January 2013

Mutually injection locked lasers for enhanced frequency response
patent, April 2014

Optical domain analog to digital conversion methods and apparatus
patent, May 2014

Parallel optical sampler
patent, May 2014

Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures
journal, January 2007
  • Morrison, Gordon B.; Raring, James W.; Wang, Chad S.
  • Solid-State Electronics, Vol. 51, Issue 1, p. 38-47
  • DOI: 10.1016/j.sse.2006.10.013

A study of regrowth interface and material quality for a novel InP-based architecture
journal, December 2004

A quantum-well-intermixing process for wavelength-agile photonic integrated circuits
journal, July 2002
  • Skogen, E.J.; Barton, J.S.; Denbaars, S.P.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 4, p. 863-869
  • DOI: 10.1109/JSTQE.2002.800849

High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP
journal, December 2004
  • Skogen, Erik J.; Barton, Jonathon S.; Raring, James W.
  • Journal of Crystal Growth, Vol. 272, Issue 1-4, p. 564-569
  • DOI: 10.1016/j.jcrysgro.2004.09.008

Monolithically integrated active components: a quantum-well intermixing approach
journal, March 2005
  • Skogen, E. J.; Raring, J. W.; Morrison, G. B.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 2, p. 343-355
  • DOI: 10.1109/JSTQE.2005.846525

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode Pairs
conference, November 2010

Similar records in DOepatents and OSTI.GOV collections: