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Title: Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
Inventors:
Issue Date:
OSTI Identifier:
1330348
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
9,477,040
Application Number:
14/801,257
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Jul 16
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

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Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode Pairs
conference, November 2010