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Title: Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 Jul 16
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

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  • Morrison, Gordon B.; Raring, James W.; Wang, Chad S.
  • Solid-State Electronics, Vol. 51, Issue 1, p. 38-47
  • DOI: 10.1016/j.sse.2006.10.013

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Monolithically integrated active components: a quantum-well intermixing approach
journal, March 2005
  • Skogen, E. J.; Raring, J. W.; Morrison, G. B.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 2, p. 343-355
  • DOI: 10.1109/JSTQE.2005.846525

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode Pairs
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