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Title: Strain tunable light emitting diodes with germanium P-I-N heterojunctions

Abstract

Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

Inventors:
;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1329305
Patent Number(s):
9,472,535
Application Number:
14/074,955
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lagally, Max G, and Sanchez Perez, Jose Roberto. Strain tunable light emitting diodes with germanium P-I-N heterojunctions. United States: N. p., 2016. Web.
Lagally, Max G, & Sanchez Perez, Jose Roberto. Strain tunable light emitting diodes with germanium P-I-N heterojunctions. United States.
Lagally, Max G, and Sanchez Perez, Jose Roberto. Tue . "Strain tunable light emitting diodes with germanium P-I-N heterojunctions". United States. https://www.osti.gov/servlets/purl/1329305.
@article{osti_1329305,
title = {Strain tunable light emitting diodes with germanium P-I-N heterojunctions},
author = {Lagally, Max G and Sanchez Perez, Jose Roberto},
abstractNote = {Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {10}
}

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Works referenced in this record:

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