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Title: Strain tunable light emitting diodes with germanium P-I-N heterojunctions

Abstract

Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

Inventors:
;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1329305
Patent Number(s):
9472535
Application Number:
14/074,955
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lagally, Max G, and Sanchez Perez, Jose Roberto. Strain tunable light emitting diodes with germanium P-I-N heterojunctions. United States: N. p., 2016. Web.
Lagally, Max G, & Sanchez Perez, Jose Roberto. Strain tunable light emitting diodes with germanium P-I-N heterojunctions. United States.
Lagally, Max G, and Sanchez Perez, Jose Roberto. Tue . "Strain tunable light emitting diodes with germanium P-I-N heterojunctions". United States. https://www.osti.gov/servlets/purl/1329305.
@article{osti_1329305,
title = {Strain tunable light emitting diodes with germanium P-I-N heterojunctions},
author = {Lagally, Max G and Sanchez Perez, Jose Roberto},
abstractNote = {Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {10}
}

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Works referenced in this record:

Stretchable and Foldable Silicon Integrated Circuits
journal, April 2008


Enhanced direct bandgap emission in germanium by micromechanical strain engineering
journal, January 2009


Strained germanium thin film membrane on silicon substrate for optoelectronics
journal, January 2011


Strain-enhanced photoluminescence from Ge direct transition
journal, May 2010


Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
journal, November 2011


Control of direct band gap emission of bulk germanium by mechanical tensile strain
journal, January 2010


Tensilely Strained Germanium Nanomembranes as Infrared Optical Gain Media
journal, November 2012


Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals
journal, January 2010


An electrically pumped germanium laser
journal, January 2012


Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
journal, January 2012


Substrate emitting index coupled quantum cascade lasers using biperiodic top metal grating
journal, April 2009


Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
journal, March 2012