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Title: Strain tunable light emitting diodes with germanium P-I-N heterojunctions

Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
Inventors:
;
Issue Date:
OSTI Identifier:
1329305
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
Patent Number(s):
9,472,535
Application Number:
14/074,955
Contract Number:
FG02-03ER46028
Resource Relation:
Patent File Date: 2013 Nov 08
Research Org:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Stretchable and Foldable Silicon Integrated Circuits
journal, April 2008

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
journal, November 2011
  • Sanchez-Perez, J. R.; Boztug, C.; Chen, F.
  • Proceedings of the National Academy of Sciences, Vol. 108, Issue 47, p. 18893-18898
  • DOI: 10.1073/pnas.1107968108