Photovoltaic cell with nano-patterned substrate
Abstract
A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1329302
- Patent Number(s):
- 9,472,702
- Application Number:
- 13/681,157
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Nov 19
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Cruz-Campa, Jose Luis, Zhou, Xiaowang, and Zubia, David. Photovoltaic cell with nano-patterned substrate. United States: N. p., 2016.
Web.
Cruz-Campa, Jose Luis, Zhou, Xiaowang, & Zubia, David. Photovoltaic cell with nano-patterned substrate. United States.
Cruz-Campa, Jose Luis, Zhou, Xiaowang, and Zubia, David. Tue .
"Photovoltaic cell with nano-patterned substrate". United States. https://www.osti.gov/servlets/purl/1329302.
@article{osti_1329302,
title = {Photovoltaic cell with nano-patterned substrate},
author = {Cruz-Campa, Jose Luis and Zhou, Xiaowang and Zubia, David},
abstractNote = {A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {10}
}
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