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Title: Virtual substrates for epitaxial growth and methods of making the same

A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1326802
Assignee:
California Institute of Technology (Pasadena, CA) GFO
Patent Number(s):
9,455,146
Application Number:
12/928,762
Contract Number:
FG36-08GO18071
Resource Relation:
Patent File Date: 2010 Dec 17
Research Org:
California Institute of Technology, Pasadena, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987
  • Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.
  • Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224
  • DOI: 10.1063/1.98946

Elastically relaxed free-standing strained-silicon nanomembranes
journal, April 2006
  • Roberts, Michelle M.; Klein, Levente J.; Savage, Donald E.
  • Nature Materials, Vol. 5, Issue 5, p. 388-393
  • DOI: 10.1038/nmat1606

Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks
journal, July 1975