Virtual substrates for epitaxial growth and methods of making the same
Abstract
A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
- Inventors:
- Issue Date:
- Research Org.:
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1326802
- Patent Number(s):
- 9455146
- Application Number:
- 12/928,762
- Assignee:
- California Institute of Technology (Pasadena, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG36-08GO18071
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Dec 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., and Callahan, Dennis M. Virtual substrates for epitaxial growth and methods of making the same. United States: N. p., 2016.
Web.
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., & Callahan, Dennis M. Virtual substrates for epitaxial growth and methods of making the same. United States.
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., and Callahan, Dennis M. Tue .
"Virtual substrates for epitaxial growth and methods of making the same". United States. https://www.osti.gov/servlets/purl/1326802.
@article{osti_1326802,
title = {Virtual substrates for epitaxial growth and methods of making the same},
author = {Atwater, Harry A. and Leite, Marina S. and Warmann, Emily C. and Callahan, Dennis M.},
abstractNote = {A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 27 00:00:00 EDT 2016},
month = {Tue Sep 27 00:00:00 EDT 2016}
}
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