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Title: Virtual substrates for epitaxial growth and methods of making the same

Abstract

A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

Inventors:
; ; ;
Issue Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1326802
Patent Number(s):
9455146
Application Number:
12/928,762
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG36-08GO18071
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Atwater, Harry A., Leite, Marina S., Warmann, Emily C., and Callahan, Dennis M. Virtual substrates for epitaxial growth and methods of making the same. United States: N. p., 2016. Web.
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., & Callahan, Dennis M. Virtual substrates for epitaxial growth and methods of making the same. United States.
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., and Callahan, Dennis M. Tue . "Virtual substrates for epitaxial growth and methods of making the same". United States. https://www.osti.gov/servlets/purl/1326802.
@article{osti_1326802,
title = {Virtual substrates for epitaxial growth and methods of making the same},
author = {Atwater, Harry A. and Leite, Marina S. and Warmann, Emily C. and Callahan, Dennis M.},
abstractNote = {A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {9}
}

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Works referenced in this record:

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987


Elastically relaxed free-standing strained-silicon nanomembranes
journal, April 2006


Generation of misfit dislocations in semiconductors
journal, December 1987


Defects in epitaxial multilayers: I. Misfit dislocations
journal, December 1974


Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks
journal, July 1975


Dislocations and strain relief in compositionally graded layers
journal, February 1993


Competing relaxation mechanisms in strained layers
journal, May 1994