Growth of antimony doped P-type zinc oxide nanowires for optoelectronics
Abstract
In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.
- Inventors:
- Issue Date:
- Research Org.:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1326799
- Patent Number(s):
- 9455399
- Application Number:
- 14/024,798
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- FG02-07ER46394
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Sep 12
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Wang, Zhong Lin, and Pradel, Ken. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics. United States: N. p., 2016.
Web.
Wang, Zhong Lin, & Pradel, Ken. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics. United States.
Wang, Zhong Lin, and Pradel, Ken. Tue .
"Growth of antimony doped P-type zinc oxide nanowires for optoelectronics". United States. https://www.osti.gov/servlets/purl/1326799.
@article{osti_1326799,
title = {Growth of antimony doped P-type zinc oxide nanowires for optoelectronics},
author = {Wang, Zhong Lin and Pradel, Ken},
abstractNote = {In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 27 00:00:00 EDT 2016},
month = {Tue Sep 27 00:00:00 EDT 2016}
}
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