Title: Local doping of two-dimensional materials

Abstract

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

Inventors:

Wong, Dillon; Velasco, Jr, Jairo; Ju, Long; Kahn, Salman; Lee, Juwon; Germany, Chad E.; Zettl, Alexander K.; Wang, Feng; Crommie, Michael F.

Issue Date:

Tue Sep 20 00:00:00 EDT 2016

Research Org.:

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1325693

Patent Number(s):

9449851

Application Number:

14/833,407

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02488 - {Insulating materials}
H01L21/02502 - {consisting of two layers}
H01L21/02527 - {Carbon, e.g. diamond-like carbon}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/2254 - {from or through or into an applied layer, e.g. photoresist, nitrides}
H01L21/2256 - {through the applied layer}
H01L21/326 - Application of electric currents or fields, e.g. for electroforming
H01L21/479 - Application of electric currents or fields, e.g. for electroforming
H01L22/14 - {for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means}
H01L29/1606 - {Graphene}

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DOE Contract Number:  

AC02-05CH11231

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Aug 24

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE