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Title: Local doping of two-dimensional materials

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
Inventors:
; ; ; ; ; ; ; ;
Issue Date:
OSTI Identifier:
1325693
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
Patent Number(s):
9,449,851
Application Number:
14/833,407
Contract Number:
AC02-05CH11231
Resource Relation:
Patent File Date: 2015 Aug 24
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Boron nitride substrates for high-quality graphene electronics
journal, August 2010
  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

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