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Title: High speed transient sampler

A high speed sampler comprises a meandered sample transmission line for transmitting an input signal, a straight strobe transmission line for transmitting a strobe signal, and a plurality of sampling gates along the transmission lines. The sampling gates comprise a four terminal diode bridge having a first strobe resistor connected from a first terminal of the bridge to the positive strobe line, a second strobe resistor coupled from the third terminal of the bridge to the negative strobe line, a tap connected to the second terminal of the bridge and to the sample transmission line, and a sample holding capacitor connected to the fourth terminal of the bridge. The resistance of the first and second strobe resistors is much higher than the signal transmission line impedance in the preferred system. This results in a sampling gate which applies a very small load on the sample transmission line and on the strobe generator. The sample holding capacitor is implemented using a smaller capacitor and a larger capacitor isolated from the smaller capacitor by resistance. The high speed sampler of the present invention is also characterized by other optimizations, including transmission line tap compensation, stepped impedance strobe line, a multi-layer physical layout,more » and unique strobe generator design. A plurality of banks of such samplers are controlled for concatenated or interleaved sample intervals to achieve long sample lengths or short sample spacing. 17 figs.« less
Inventors:
Issue Date:
OSTI Identifier:
131932
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 420200; PA: EDB-95:157220; SN: 95001489033
Patent Number(s):
US 5,471,162/A/
Application Number:
PAN: 7-942,164
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 28 Nov 1995
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SAMPLERS; DESIGN; ELECTRIC CONDUCTIVITY; CONTROL SYSTEMS; DATA TRANSMISSION; SEMICONDUCTOR DIODES; GATING CIRCUITS

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