Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
Abstract
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1303254
- Patent Number(s):
- 9425249
- Application Number:
- 13/990,743
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Dec 01
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States: N. p., 2016.
Web.
Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States.
Norman, Andrew. Tue .
"Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers". United States. https://www.osti.gov/servlets/purl/1303254.
@article{osti_1303254,
title = {Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers},
author = {Norman, Andrew},
abstractNote = {A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}
Works referenced in this record:
Nanoparticle Superlattice Engineering with DNA
journal, October 2011
- Macfarlane, R. J.; Lee, B.; Jones, M. R.
- Science, Vol. 334, Issue 6053, p. 204-208
Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates
journal, August 2002
- Andrianov, A. V.; Yamada, K.; Tampo, H.
- Semiconductors, Vol. 36, Issue 8
Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides
journal, November 1999
- As, D. J.; Lischka, K.
- physica status solidi (a), Vol. 176, Issue 1, p. 475-485
Strong Photoluminescence Emission from Polycrystalline GaN Grown on Metal Substrate by NH3 Source MBE
journal, December 2001
- Asahi, H.; Tampo, H.; Yamada, K.
- physica status solidi (a), Vol. 188, Issue 2
Thin film poly III–V space solar cells
conference, May 2008
- Bailey, Sheila G.; Wilt, David M.; McNatt, Jeremiah S.
- 2008 33rd IEEE Photovolatic Specialists Conference (PVSC)
Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges
journal, April 2006
- Baur, C.; Bett, A. W.; Dimroth, F.
- Journal of Solar Energy Engineering, Vol. 129, Issue 3
Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry
journal, November 2001
- Cantoni, C.; Christen, D. K.; Feenstra, R.
- Applied Physics Letters, Vol. 79, Issue 19
Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
journal, June 1978
- Cho, A. Y.; Dernier, P. D.
- Journal of Applied Physics, Vol. 49, Issue 6
On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
journal, March 2000
- Efimov, A. N.; Lebedev, A. O.; Lundin, V. V.
- Crystallography Reports, Vol. 45, Issue 2
Material considerations for terawatt level deployment of photovoltaics
journal, February 2008
- Feltrin, Andrea; Freundlich, Alex
- Renewable Energy, Vol. 33, Issue 2, p. 180-185
Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates
journal, January 2008
- Findikoglu, Alp; Holesinger, Terry G.; Niemeyer, Alyson
- MRS Proceedings, Vol. 1150
Properties of epitaxial GaN on refractory metal substrates
journal, February 2007
- Freitas, Jaime A.; Rowland, Larry B.; Kim, Jihyun
- Applied Physics Letters, Vol. 90, Issue 9
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007
- Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.
- Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008
- Geisz, J. F.; Friedman, D. J.; Ward, J. S.
- Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505
Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
journal, January 1996
- George, T.; Jacobsohn, E.; Pike, W. T.
- Applied Physics Letters, Vol. 68, Issue 3
The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors
journal, August 2004
- Goyal, Amit; Paranthaman, M. Parans; Schoop, U.
- MRS Bulletin, Vol. 29, Issue 8
Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)
journal, October 2000
- Haworth, L.; Lu, J.; Westwood, D. I.
- Applied Surface Science, Vol. 166, Issue 1-4, p. 418-422
Epitaxial growth of AlN films on single-crystalline Ta substrates
journal, August 2007
- Hirata, S.; Okamoto, K.; Inoue, S.
- Journal of Solid State Chemistry, Vol. 180, Issue 8, p. 2335-2339
Nucleation and growth of epitaxial ZrB2(0001) on Si(111)
journal, July 2004
- Hu, C.-W.; Chizmeshya, A. V. G.; Tolle, J.
- Journal of Crystal Growth, Vol. 267, Issue 3-4, p. 554-563
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
journal, March 1993
- Watanabe, A.; Takeuchi, T.; Hirosawa, K.
- Journal of Crystal Growth, Vol. 128, Issue 1-4, p. 391-396
Epitaxial growth of GaN on copper substrates
journal, June 2006
- Inoue, S.; Okamoto, K.; Matsuki, N.
- Applied Physics Letters, Vol. 88, Issue 26
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
journal, October 1996
- Asif Khan, M.; Sun, C. J.; Yang, J. W.
- Applied Physics Letters, Vol. 69, Issue 16
Properties of GaN epitaxial layer grown on (111) MgAl2O4 substrate
journal, February 1997
- Kuramata, Akito; Horino, Kazuhiko; Domen, Kay
- Solid-State Electronics, Vol. 41, Issue 2, p. 251-254
Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substrates
journal, October 2006
- Li, Guoqiang; Ohta, Jitsuo; Kobayashi, Atsushi
- Applied Physics Letters, Vol. 89, Issue 18
Epitaxial growth of single-crystalline AlN films on tungsten substrates
journal, December 2006
- Li, Guoqiang; Kim, Tae-Won; Inoue, Shigeru
- Applied Physics Letters, Vol. 89, Issue 24
Suppression of domain formation in GaN layers grown on Ge(111)
journal, February 2009
- Lieten, R. R.; Degroote, S.; Leys, M.
- Journal of Crystal Growth, Vol. 311, Issue 5, p. 1306-1310
Morphological and chemical considerations for the epitaxy of metals on semiconductors
journal, January 1984
- Ludeke, R.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 2, Issue 3
Epitaxial relationships between Al, Ag and GaAs{001} surfaces
journal, January 1982
- Massies, Jean; Linh, Nuyen T.
- Surface Science, Vol. 114, Issue 1, p. 147-160
Growth and properties of GaN and AlN layers on silver substrates
journal, November 2005
- Mikulics, Martin; Kočan, Martin; Rizzi, Angela
- Applied Physics Letters, Vol. 87, Issue 21
Growth of InN films on spinel substrates by pulsed laser deposition
journal, October 2007
- Mitamura, K.; Ohta, J.; Fujioka, H.
- physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 5
Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
journal, May 1998
- Nikishin, S. A.; Temkin, H.; Antipov, V. G.
- Applied Physics Letters, Vol. 72, Issue 19
Increasing cube texture in high purity aluminium foils for capacitors
journal, December 2005
- Pan, F. S.; Peng, J.; Tang, A. T.
- Materials Science and Technology, Vol. 21, Issue 12
Research challenges to ultra-efficient inorganic solid-state lighting
journal, December 2007
- Phillips, J. M.; Coltrin, M. E.; Crawford, M. H.
- Laser & Photonics Review, Vol. 1, Issue 4, p. 307-333
The growth of epitaxial aluminium on As containing compound semiconductors
journal, January 1999
- Pilkington, S. J.; Missous, M.
- Journal of Crystal Growth, Vol. 196, Issue 1, p. 1-12
Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures
journal, January 1999
- Sacks, R. N.; Qin, L.; Jazwiecki, M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 3
General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)
journal, May 2002
- Kuznetsov, G. F.; Aitkhozhin, S. A.
- Crystallography Reports, Vol. 47, Issue 3
Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE
journal, April 1990
- Sands, T.; Harbison, J. P.; Tabatabaie, N.
- Surface Science, Vol. 228, Issue 1-3, p. 1-8
GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
journal, February 2009
- Scarpulla, M. A.; Gallinat, C. S.; Mack, S.
- Journal of Crystal Growth, Vol. 311, Issue 5, p. 1239-1244
Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
journal, March 1997
- Sun, C. J.; Yang, J. W.; Lim, B. W.
- Applied Physics Letters, Vol. 70, Issue 11
MBE growth of GaN on MgO substrate
journal, April 2007
- Suzuki, Ryotaro; Kawaharazuka, Atsushi; Horikoshi, Yoshiji
- Journal of Crystal Growth, Vol. 301-302, p. 478-481
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
journal, December 2005
- Tinjod, F.; de Mierry, P.; Lancefield, D.
- Journal of Crystal Growth, Vol. 285, Issue 4, p. 450-458
Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
journal, April 2003
- Tolle, J.; Roucka, R.; Tsong, I. S. T.
- Applied Physics Letters, Vol. 82, Issue 15
Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates
journal, December 2000
- Tsuchiya, Tohru; Ohnishi, Masato; Wakahara, Akihiro
- Journal of Crystal Growth, Vol. 220, Issue 3, p. 191-196
Band parameters for nitrogen-containing semiconductors
journal, September 2003
- Vurgaftman, I.; Meyer, J. R.
- Journal of Applied Physics, Vol. 94, Issue 6
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
journal, October 1998
- Yang, H.-F.; Han, P.-D.; Cheng, L.-S.
- Journal of Crystal Growth, Vol. 193, Issue 4, p. 478-483
Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates
journal, May 2001
- Yamada, K.; Asahi, H.; Tampo, H.
- Applied Physics Letters, Vol. 78, Issue 19
Molecular-beam epitaxy and migration-enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates
journal, September 1992
- López, M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 5
Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions
journal, April 2007
- Wang, Tao; Chen, Long-Qing; Liu, Zi-Kui
- Metallurgical and Materials Transactions A, Vol. 38, Issue 3
Transmission electron microscope study on electrodeposited Gd2O3 and Gd2Zr2O7 buffer layers for YBa2Cu3O7−δ superconductors
journal, July 2008
- Zhao, Wenjun; Norman, Andrew; Phok, Sovannary
- Physica C: Superconductivity and its Applications, Vol. 468, Issue 14, p. 1092-1096
Domain epitaxy: A unified paradigm for thin film growth
journal, January 2003
- Narayan, J.; Larson, B. C.
- Journal of Applied Physics, Vol. 93, Issue 1
Low cost, single crystal-like substrates for practical, high efficiency solar cells
conference, January 1997
- Goyal, A.; Norton, D. P.; Paranthaman, M.
- Future generation photovoltaic technologies, AIP Conference Proceedings
Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4
journal, January 2006
- Ohta, J.; Mitamura, K.; Kobayashi, A.
- Solid State Communications, Vol. 137, Issue 4, p. 208-211
Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation
journal, March 2002
- Trampert, Achim
- Physica E: Low-dimensional Systems and Nanostructures, Vol. 13, Issue 2-4, p. 1119-1125
InGaN‐GaN based light‐emitting diodes over (111) spinel substrates
journal, July 1996
- Yang, J. W.; Chen, Q.; Sun, C. J.
- Applied Physics Letters, Vol. 69, Issue 3
Lattice-matched HfN buffer layers for epitaxy of GaN on Si
journal, August 2002
- Armitage, R.; Yang, Qing; Feick, H.
- Applied Physics Letters, Vol. 81, Issue 8
Epitaxy and Molecular Organization on Solid Substrates
journal, February 2001
- Hooks, D. E.; Fritz, T.; Ward, M. D.
- Advanced Materials, Vol. 13, Issue 4
Epitaxial growth in large‐lattice‐mismatch systems
journal, January 1994
- Zheleva, Tsvetanka; Jagannadham, K.; Narayan, J.
- Journal of Applied Physics, Vol. 75, Issue 2
New frontiers in thin film growth and nanomaterials
journal, February 2005
- Narayan, Jagdish
- Metallurgical and Materials Transactions A, Vol. 36, Issue 2
High rate epitaxial lift-off of InGaP films from GaAs substrates
journal, April 2000
- Schermer, J. J.; Bauhuis, G. J.; Mulder, P.
- Applied Physics Letters, Vol. 76, Issue 15
Diffusion reactions at Al–MgAl2O4 interfaces—and the effect of applied electric fields
journal, December 2006
- Yu, Y.; Mark, J.; Ernst, F.
- Journal of Materials Science, Vol. 41, Issue 23
High-precision assessment of interface lattice offset by quantitative HRTEM: DETERMINATION OF LATTICE OFFSET BY HRTEM
journal, April 1999
- Schweinfest,
- Journal of Microscopy, Vol. 194, Issue 1
Atomistic and electronic structure of Al/MgAl 2 O 4 and Ag/MgAl 2 O 4 interfaces
journal, April 2001
- Schweinfest, R.; Köstlmeier, S.; Ernst, F.
- Philosophical Magazine A, Vol. 81, Issue 4
Single‐crystal Al growth on Si(111) by low‐temperature molecular beam epitaxy
journal, April 1993
- Miura, Y.; Fujieda, S.; Hirose, K.
- Applied Physics Letters, Vol. 62, Issue 15
Characterization of single-crystalline Al films grown on Si(111)
journal, October 1996
- Fortuin, A. W.; Alkemade, P. F. A.; Verbruggen, A. H.
- Surface Science, Vol. 366, Issue 2, p. 285-294
Large-misfit heteroepitaxy of aluminum films by ICB deposition
journal, July 1991
- Isao, Yamada; Hiroaki, Usui; Sou, Tanaka
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 59-60, p. 302-307
Epitaxial Al Schottky contacts formed on (111) GaAs
journal, May 1990
- Ueno, Kazuyoshi; Yoshida, Takayoshi; Hirose, Kazuyuki
- Applied Physics Letters, Vol. 56, Issue 22
Epitaxial growth of (011) Al on (100) Si by vapor deposition
journal, July 1992
- Thangaraj, N.; Westmacott, K. H.; Dahmen, U.
- Applied Physics Letters, Vol. 61, Issue 1
Epitaxial growth of (001) Al on (111) Si by vapor deposition
journal, August 1992
- Thangaraj, N.; Westmacott, K. H.; Dahmen, U.
- Applied Physics Letters, Vol. 61, Issue 8
Importance of steps in heteroepitaxy: The case of aluminum on silicon
journal, December 1994
- Sosnowski, Marek; Ramac, Samuel; Brown, Walter L.
- Applied Physics Letters, Vol. 65, Issue 23
RHEED Studies of MBE-grown Aluminium Layers on {111}-Oriented Silicon Substrates
journal, January 1991
- Büschel, M.; Tempel, A.; Zehe, A.
- Crystal Research and Technology, Vol. 26, Issue 2
The Epitaxial Orientation of Al on Si
journal, January 1993
- Tempel, A.; Büschel, M.; Gantz, T.
- Crystal Research and Technology, Vol. 28, Issue 3
Lattice match: An application to heteroepitaxy
journal, January 1984
- Zur, A.; McGill, T. C.
- Journal of Applied Physics, Vol. 55, Issue 2
Modeling structural and chemical relaxation at the Al/Si epitaxial interface
journal, July 1991
- Bartholomeusz, B. J.; Lu, T. -M.; Rajan, K.
- Journal of Electronic Materials, Vol. 20, Issue 7
Epitaxial growth of sputtered A1 films on Si(001) substrates
journal, September 1991
- Kato, By Masaharu; Niwa, H.
- Philosophical Magazine B, Vol. 64, Issue 3
Atomic structure of the epitaxial Al–Si interface
journal, June 1986
- Legoues, F. K.; Krakow, W.; Ho, P. S.
- Philosophical Magazine A, Vol. 53, Issue 6
Direct observation of an incommensurate solid-solid interface
journal, May 1989
- Lu, T. -M.; Bai, P.; Yapsir, A. S.
- Physical Review B, Vol. 39, Issue 13
Epitaxial growth of Al on Si(001) by sputtering
journal, July 1991
- Niwa, H.; Kato, Masaharu
- Applied Physics Letters, Vol. 59, Issue 5
Single‐crystal Al films grown by sputtering on (111)Si substrates
journal, May 1992
- Niwa, H.; Kato, Masaharu
- Applied Physics Letters, Vol. 60, Issue 20
Heteroepitaxy of Large-Misfit Systems: Role of Coincidence Lattice
journal, July 2000
- Trampert, A.; Ploog, K. H.
- Crystal Research and Technology, Vol. 35, Issue 6-7
Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates
journal, June 2001
- Westmacott, K. H.; Hinderberger, S.; Dahmen, U.
- Philosophical Magazine A, Vol. 81, Issue 6
Universal bandgap bowing in group-III nitride alloys
journal, August 2003
- Wu, J.; Walukiewicz, W.; Yu, K. M.
- Solid State Communications, Vol. 127, Issue 6, p. 411-414
Cross-sectional TEM observation of the epitaxial Al/Si(111) interface
journal, January 1992
- Yokota, Yosuhiro; Kobayashi, Tukasa; Hirai, Masaaki
- Applied Surface Science, Vol. 60-61, p. 385-390