skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

Abstract

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1303254
Patent Number(s):
9425249
Application Number:
13/990,743
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 01
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States: N. p., 2016. Web.
Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States.
Norman, Andrew. Tue . "Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers". United States. https://www.osti.gov/servlets/purl/1303254.
@article{osti_1303254,
title = {Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers},
author = {Norman, Andrew},
abstractNote = {A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}

Patent:

Save / Share:

Works referenced in this record:

Nanoparticle Superlattice Engineering with DNA
journal, October 2011


Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates
journal, August 2002


Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides
journal, November 1999


Thin film poly III–V space solar cells
conference, May 2008


Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges
journal, April 2006


Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
journal, June 1978


On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
journal, March 2000


Material considerations for terawatt level deployment of photovoltaics
journal, February 2008


Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates
journal, January 2008


Properties of epitaxial GaN on refractory metal substrates
journal, February 2007


High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007


40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008


Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
journal, January 1996


The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors
journal, August 2004


Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)
journal, October 2000


Epitaxial growth of AlN films on single-crystalline Ta substrates
journal, August 2007


Nucleation and growth of epitaxial ZrB2(0001) on Si(111)
journal, July 2004


The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
journal, March 1993


Epitaxial growth of GaN on copper substrates
journal, June 2006


Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
journal, October 1996


Properties of GaN epitaxial layer grown on (111) MgAl2O4 substrate
journal, February 1997


Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substrates
journal, October 2006


Epitaxial growth of single-crystalline AlN films on tungsten substrates
journal, December 2006


Suppression of domain formation in GaN layers grown on Ge(111)
journal, February 2009


Morphological and chemical considerations for the epitaxy of metals on semiconductors
journal, January 1984


Epitaxial relationships between Al, Ag and GaAs{001} surfaces
journal, January 1982


Growth and properties of GaN and AlN layers on silver substrates
journal, November 2005


Growth of InN films on spinel substrates by pulsed laser deposition
journal, October 2007


Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
journal, May 1998


Increasing cube texture in high purity aluminium foils for capacitors
journal, December 2005


Research challenges to ultra-efficient inorganic solid-state lighting
journal, December 2007


The growth of epitaxial aluminium on As containing compound semiconductors
journal, January 1999


Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures
journal, January 1999

  • Sacks, R. N.; Qin, L.; Jazwiecki, M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 3
  • https://doi.org/10.1116/1.590742

Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE
journal, April 1990


GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
journal, February 2009


Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
journal, March 1997


MBE growth of GaN on MgO substrate
journal, April 2007


Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
journal, December 2005


Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
journal, April 2003


Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates
journal, December 2000


Band parameters for nitrogen-containing semiconductors
journal, September 2003


Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
journal, October 1998


Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates
journal, May 2001


Molecular-beam epitaxy and migration-enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates
journal, September 1992


Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions
journal, April 2007


Transmission electron microscope study on electrodeposited Gd2O3 and Gd2Zr2O7 buffer layers for YBa2Cu3O7−δ superconductors
journal, July 2008


Domain epitaxy: A unified paradigm for thin film growth
journal, January 2003


Low cost, single crystal-like substrates for practical, high efficiency solar cells
conference, January 1997


Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4
journal, January 2006


Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation
journal, March 2002


InGaN‐GaN based light‐emitting diodes over (111) spinel substrates
journal, July 1996


Lattice-matched HfN buffer layers for epitaxy of GaN on Si
journal, August 2002


Epitaxy and Molecular Organization on Solid Substrates
journal, February 2001


Epitaxial growth in large‐lattice‐mismatch systems
journal, January 1994


New frontiers in thin film growth and nanomaterials
journal, February 2005


High rate epitaxial lift-off of InGaP films from GaAs substrates
journal, April 2000


Diffusion reactions at Al–MgAl2O4 interfaces—and the effect of applied electric fields
journal, December 2006


Atomistic and electronic structure of Al/MgAl 2 O 4 and Ag/MgAl 2 O 4 interfaces
journal, April 2001


Single‐crystal Al growth on Si(111) by low‐temperature molecular beam epitaxy
journal, April 1993


Characterization of single-crystalline Al films grown on Si(111)
journal, October 1996


Large-misfit heteroepitaxy of aluminum films by ICB deposition
journal, July 1991


Epitaxial Al Schottky contacts formed on (111) GaAs
journal, May 1990


Epitaxial growth of (011) Al on (100) Si by vapor deposition
journal, July 1992


Epitaxial growth of (001) Al on (111) Si by vapor deposition
journal, August 1992


Importance of steps in heteroepitaxy: The case of aluminum on silicon
journal, December 1994


RHEED Studies of MBE-grown Aluminium Layers on {111}-Oriented Silicon Substrates
journal, January 1991


The Epitaxial Orientation of Al on Si
journal, January 1993


Lattice match: An application to heteroepitaxy
journal, January 1984


Modeling structural and chemical relaxation at the Al/Si epitaxial interface
journal, July 1991


Epitaxial growth of sputtered A1 films on Si(001) substrates
journal, September 1991


Atomic structure of the epitaxial Al–Si interface
journal, June 1986


Direct observation of an incommensurate solid-solid interface
journal, May 1989


Epitaxial growth of Al on Si(001) by sputtering
journal, July 1991


Single‐crystal Al films grown by sputtering on (111)Si substrates
journal, May 1992


Heteroepitaxy of Large-Misfit Systems: Role of Coincidence Lattice
journal, July 2000


Universal bandgap bowing in group-III nitride alloys
journal, August 2003


Cross-sectional TEM observation of the epitaxial Al/Si(111) interface
journal, January 1992