Title: Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

Abstract

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Inventors:

Norman, Andrew

Issue Date:

2016-08-23

Research Org.:

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1303254

Patent Number(s):

9425249

Application Number:

13/990,743

Assignee:

Alliance for Sustainable Energy, LLC (Golden, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02439 - {Materials}
H01L31/1852 - {comprising a growth substrate not being an AIIIBV compound}
H01L33/26 - Materials of the light emitting region
H01L31/056 - the light-reflecting means being of the back surface reflector [BSR] type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/52 - PV systems with concentrators

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02502 - {consisting of two layers}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0242 - {Crystalline insulating materials}
H01L31/0725 - Multiple junction or tandem solar cells
H01L21/02521 - {Materials}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials
Y02E10/548 - Amorphous silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L33/12 - with a stress relaxation structure, e.g. buffer layer
H01L33/007 - {comprising nitride compounds}
H01L31/076 - Multiple junction or tandem solar cells
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L21/02395 - {Arsenides}
H01L21/02491 - {Conductive materials}

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DOE Contract Number:  

AC36-08GO28308

Resource Type:

Patent

Resource Relation:

Patent File Date: 2010 Dec 01

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE