Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
Abstract
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1303254
- Patent Number(s):
- 9425249
- Application Number:
- 13/990,743
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Dec 01
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States: N. p., 2016.
Web.
Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States.
Norman, Andrew. Tue .
"Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers". United States. https://www.osti.gov/servlets/purl/1303254.
@article{osti_1303254,
title = {Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers},
author = {Norman, Andrew},
abstractNote = {A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}
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Cross-sectional TEM observation of the epitaxial Al/Si(111) interface
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