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Title: Method for forming monolayer graphene-boron nitride heterostructures

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
Inventors:
;
Issue Date:
OSTI Identifier:
1289690
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) BNL
Patent Number(s):
9,410,243
Application Number:
14/453,314
Contract Number:
AC02-98CH10886
Resource Relation:
Patent File Date: 2014 Aug 06
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

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Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics
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