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Title: Method for forming monolayer graphene-boron nitride heterostructures

Abstract

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

Inventors:
;
Issue Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1289690
Patent Number(s):
9,410,243
Application Number:
14/453,314
Assignee:
Brookhaven Science Associates, LLC (Upton, NY)
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sutter, Peter Werner, and Sutter, Eli Anguelova. Method for forming monolayer graphene-boron nitride heterostructures. United States: N. p., 2016. Web.
Sutter, Peter Werner, & Sutter, Eli Anguelova. Method for forming monolayer graphene-boron nitride heterostructures. United States.
Sutter, Peter Werner, and Sutter, Eli Anguelova. Tue . "Method for forming monolayer graphene-boron nitride heterostructures". United States. https://www.osti.gov/servlets/purl/1289690.
@article{osti_1289690,
title = {Method for forming monolayer graphene-boron nitride heterostructures},
author = {Sutter, Peter Werner and Sutter, Eli Anguelova},
abstractNote = {A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}

Patent:

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Works referenced in this record:

Atomic layers of hybridized boron nitride and graphene domains
journal, February 2010

  • Ci, Lijie; Song, Li; Jin, Chuanhong
  • Nature Materials, Vol. 9, Issue 5, p. 430-435
  • DOI: 10.1038/nmat2711

Chemical Vapor Deposition and Etching of High-Quality Monolayer Hexagonal Boron Nitride Films
journal, August 2011

  • Sutter, Peter; Lahiri, Jayeeta; Albrecht, Peter
  • ACS Nano, Vol. 5, Issue 9
  • DOI: 10.1021/nn202141k

Visualizing Individual Nitrogen Dopants in Monolayer Graphene
journal, August 2011


Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
journal, March 2010

  • Krivanek, Ondrej L.; Chisholm, Matthew F.; Nicolosi, Valeria
  • Nature, Vol. 464, Issue 7288
  • DOI: 10.1038/nature08879

Epitaxial graphene on ruthenium
journal, April 2008

  • Sutter, Peter W.; Flege, Jan-Ingo; Sutter, Eli A.
  • Nature Materials, Vol. 7, Issue 5, p. 406-411
  • DOI: 10.1038/nmat2166

Real-Time Microscopy of Graphene Growth on Epitaxial Metal Films: Role of Template Thickness and Strain
journal, April 2012


Graphene growth on epitaxial Ru thin films on sapphire
journal, November 2010

  • Sutter, P. W.; Albrecht, P. M.; Sutter, E. A.
  • Applied Physics Letters, Vol. 97, Issue 21
  • DOI: 10.1063/1.3518490

Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors
journal, February 2012

  • Fiori, Gianluca; Betti, Alessandro; Bruzzone, Samantha
  • ACS Nano, Vol. 6, Issue 3
  • DOI: 10.1021/nn300019b

Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics
journal, January 2012

  • Lee, Kang Hyuck; Shin, Hyeon-Jin; Lee, Jinyeong
  • Nano Letters, Vol. 12, Issue 2, p. 714-718
  • DOI: 10.1021/nl203635v

Graphene and boron nitride lateral heterostructures for atomically thin circuitry
journal, August 2012

  • Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola
  • Nature, Vol. 488, Issue 7413, p. 627-632
  • DOI: 10.1038/nature11408

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers
journal, May 2011

  • Liu, Zheng; Song, Li; Zhao, Shizhen
  • Nano Letters, Vol. 11, Issue 5
  • DOI: 10.1021/nl200464j

Origin of half-semimetallicity induced at interfaces of C-BN heterostructures
journal, April 2010


Interface Formation in Monolayer Graphene-Boron Nitride Heterostructures
journal, January 2012

  • Sutter, P.; Cortes, R.; Lahiri, J.
  • Nano Letters, Vol. 12, Issue 9
  • DOI: 10.1021/nl302398m

Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films
journal, December 2012

  • Sutter, P.; Lahiri, J.; Zahl, P.
  • Nano Letters, Vol. 13, Issue 1
  • DOI: 10.1021/nl304080y

Microscopy of Graphene Growth, Processing, and Properties
journal, April 2013

  • Sutter, Peter; Sutter, Eli
  • Advanced Functional Materials, Vol. 23, Issue 20, p. 2617-2634
  • DOI: 10.1002/adfm.201203426