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Title: Method for forming monolayer graphene-boron nitride heterostructures

Abstract

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

Inventors:
;
Issue Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1289690
Patent Number(s):
9410243
Application Number:
14/453,314
Assignee:
Brookhaven Science Associates, LLC (Upton, NY)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sutter, Peter Werner, and Sutter, Eli Anguelova. Method for forming monolayer graphene-boron nitride heterostructures. United States: N. p., 2016. Web.
Sutter, Peter Werner, & Sutter, Eli Anguelova. Method for forming monolayer graphene-boron nitride heterostructures. United States.
Sutter, Peter Werner, and Sutter, Eli Anguelova. Tue . "Method for forming monolayer graphene-boron nitride heterostructures". United States. https://www.osti.gov/servlets/purl/1289690.
@article{osti_1289690,
title = {Method for forming monolayer graphene-boron nitride heterostructures},
author = {Sutter, Peter Werner and Sutter, Eli Anguelova},
abstractNote = {A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}

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Works referenced in this record:

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