Title: Method for forming monolayer graphene-boron nitride heterostructures

Abstract

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

Inventors:

Sutter, Peter Werner; Sutter, Eli Anguelova

Issue Date:

2016-08-09

Research Org.:

Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1289690

Patent Number(s):

9410243

Application Number:

14/453,314

Assignee:

Brookhaven Science Associates, LLC (Upton, NY)

Patent Classifications (CPCs):

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B32/194 - After-treatment

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02527 - {Carbon, e.g. diamond-like carbon}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/02 - Epitaxial-layer growth

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B32/186 - by chemical vapour deposition [CVD]

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/26 - Deposition of carbon only

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/18 - characterised by the substrate

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02433 - {Crystal orientation}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/02 - Elements

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/342 - {Boron nitride}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0243 - {Surface structure}
H01L21/02425 - {Conductive materials, e.g. metallic silicides}

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B35/14 - Compounds containing boron and nitrogen, phosphorus, sulfur, selenium or tellurium

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0259 - {Microstructure}
H01L21/0254 - {Nitrides}
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02499 - {Monolayers}

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DOE Contract Number:  

AC02-98CH10886

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Aug 06

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE