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Title: Multilevel resistive information storage and retrieval

The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.
Inventors:
;
Issue Date:
OSTI Identifier:
1288560
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
9,412,446
Application Number:
14/462,472
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2014 Aug 18
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 42 ENGINEERING

Other works cited in this record:

Periodicity and dissipativity for memristor-based mixed time-varying delayed neural networks via differential inclusions
journal, September 2014

Experimental demonstration of associative memory with memristive neural networks
journal, September 2010

Thermal Conductivity of Titanium Carbide, Zirconium Carbide, and Titanium Nitride at High Temperatures
journal, February 1964

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
journal, January 2013
  • Balatti, S.; Larentis, S.; Gilmer, D. C.
  • Advanced Materials, Vol. 25, Issue 10, p. 1474-1478
  • DOI: 10.1002/adma.201204097

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)
journal, July 2009

Filament diffusion model for simulating reset and retention processes in RRAM
journal, July 2011
  • Larentis, S.; Cagli, C.; Nardi, F.
  • Microelectronic Engineering, Vol. 88, Issue 7, p. 1119-1123
  • DOI: 10.1016/j.mee.2011.03.055

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