Micropores and methods of making and using thereof
Abstract
Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2.times. a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1280743
- Patent Number(s):
- 9404913
- Application Number:
- 14/057,170
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 18
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 59 BASIC BIOLOGICAL SCIENCES
Citation Formats
Perroud, Thomas D., Patel, Kamlesh D., and Meagher, Robert J. Micropores and methods of making and using thereof. United States: N. p., 2016.
Web.
Perroud, Thomas D., Patel, Kamlesh D., & Meagher, Robert J. Micropores and methods of making and using thereof. United States.
Perroud, Thomas D., Patel, Kamlesh D., and Meagher, Robert J. Tue .
"Micropores and methods of making and using thereof". United States. https://www.osti.gov/servlets/purl/1280743.
@article{osti_1280743,
title = {Micropores and methods of making and using thereof},
author = {Perroud, Thomas D. and Patel, Kamlesh D. and Meagher, Robert J.},
abstractNote = {Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2.times. a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}
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