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Title: Method for producing highly conformal transparent conducting oxides

Abstract

A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1273245
Patent Number(s):
9401231
Application Number:
13/249,864
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Elam, Jeffrey W., and Mane, Anil U. Method for producing highly conformal transparent conducting oxides. United States: N. p., 2016. Web.
Elam, Jeffrey W., & Mane, Anil U. Method for producing highly conformal transparent conducting oxides. United States.
Elam, Jeffrey W., and Mane, Anil U. Tue . "Method for producing highly conformal transparent conducting oxides". United States. https://www.osti.gov/servlets/purl/1273245.
@article{osti_1273245,
title = {Method for producing highly conformal transparent conducting oxides},
author = {Elam, Jeffrey W. and Mane, Anil U.},
abstractNote = {A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {7}
}

Works referenced in this record:

Atomic layer deposition growth of zirconium doped In2O3 films
journal, September 2003


Growth of Indium-Tin-Oxide Thin Films by Atomic Layer Epitaxy
journal, January 1995


Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors
journal, February 2008


Self-Limiting Film Growth of Transparent Conducting In 2 O 3 by Atomic Layer Deposition using Trimethylindium and Water Vapor
journal, July 2011


Indium Oxide Atomic Layer Deposition Facilitated by the Synergy between Oxygen and Water
journal, April 2011


Enhanced Growth Rate in Atomic Layer Epitaxy of Indium Oxide and Indium-Tin Oxide Thin Films
journal, January 1999