Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
Abstract
A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1261619
- Patent Number(s):
- 9388499
- Application Number:
- 14/288,998
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 May 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Martinson, Alex B., Riha, Shannon, Guo, Peijun, and Emery, Jonathan D. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion. United States: N. p., 2016.
Web.
Martinson, Alex B., Riha, Shannon, Guo, Peijun, & Emery, Jonathan D. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion. United States.
Martinson, Alex B., Riha, Shannon, Guo, Peijun, and Emery, Jonathan D. Tue .
"Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion". United States. https://www.osti.gov/servlets/purl/1261619.
@article{osti_1261619,
title = {Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion},
author = {Martinson, Alex B. and Riha, Shannon and Guo, Peijun and Emery, Jonathan D.},
abstractNote = {A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {7}
}
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Works referenced in this record:
Substrate Dependent Water Splitting with Ultrathin α-Fe 2 O 3 Electrodes
journal, May 2014
- Zandi, Omid; Beardslee, Joseph A.; Hamann, Thomas
- The Journal of Physical Chemistry C, Vol. 118, Issue 30
Atomic Layer Deposition of Fe2O3 Using Ferrocene and Ozone
journal, February 2011
- Martinson, Alex B. F.; DeVries, Michael J.; Libera, Joseph A.
- The Journal of Physical Chemistry C, Vol. 115, Issue 10, p. 4333-4339
Low-resistance ITO thin film and method for manufacturing such a film
patent, November 2004
- Ohta, Hiromichi; Orita, Masahiro
- US Patent Document 6,821,655