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Title: Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Abstract

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Inventors:
; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1261619
Patent Number(s):
9388499
Application Number:
14/288,998
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 May 28
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Martinson, Alex B., Riha, Shannon, Guo, Peijun, and Emery, Jonathan D. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion. United States: N. p., 2016. Web.
Martinson, Alex B., Riha, Shannon, Guo, Peijun, & Emery, Jonathan D. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion. United States.
Martinson, Alex B., Riha, Shannon, Guo, Peijun, and Emery, Jonathan D. Tue . "Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion". United States. https://www.osti.gov/servlets/purl/1261619.
@article{osti_1261619,
title = {Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion},
author = {Martinson, Alex B. and Riha, Shannon and Guo, Peijun and Emery, Jonathan D.},
abstractNote = {A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {7}
}

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Works referenced in this record:

Substrate Dependent Water Splitting with Ultrathin ╬▒-Fe 2 O 3 Electrodes
journal, May 2014


Atomic Layer Deposition of Fe2O3 Using Ferrocene and Ozone
journal, February 2011

  • Martinson, Alex B. F.; DeVries, Michael J.; Libera, Joseph A.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 10, p. 4333-4339
  • https://doi.org/10.1021/jp110203x