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Title: Oxygen-free atomic layer deposition of indium sulfide

Abstract

A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

Inventors:
; ; ;
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260247
Patent Number(s):
9382618
Application Number:
14/335,745
Assignee:
UChicago Argnonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Martinson, Alex B., Hock, Adam S., McCarthy, Robert, and Weimer, Matthew S. Oxygen-free atomic layer deposition of indium sulfide. United States: N. p., 2016. Web.
Martinson, Alex B., Hock, Adam S., McCarthy, Robert, & Weimer, Matthew S. Oxygen-free atomic layer deposition of indium sulfide. United States.
Martinson, Alex B., Hock, Adam S., McCarthy, Robert, and Weimer, Matthew S. Tue . "Oxygen-free atomic layer deposition of indium sulfide". United States. https://www.osti.gov/servlets/purl/1260247.
@article{osti_1260247,
title = {Oxygen-free atomic layer deposition of indium sulfide},
author = {Martinson, Alex B. and Hock, Adam S. and McCarthy, Robert and Weimer, Matthew S.},
abstractNote = {A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {7}
}

Works referenced in this record:

Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se2 thin-film solar cells
journal, May 2001


Atomic Layer Deposition of Indium Sulfide Layers for Copper Indium Gallium Diselenide Solar Cells
journal, January 2001


High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)
journal, January 2003


Oxygen-Free Atomic Layer Deposition of Indium Sulfide
journal, July 2014


Cationic group 13 complexes incorporating bidentate ligands as polymerization catalysts
patent, May 2001


Atomic layer deposition using metal amidinates
patent, July 2009


Enhancing the Photovoltaic Response of CZTS Thin-Films
patent-application, August 2013


Sulfur-Containing Thin Films
patent-application, June 2015