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Title: Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
Inventors:
;
Issue Date:
OSTI Identifier:
1260240
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) BNL
Patent Number(s):
9,383,452
Application Number:
14/352,538
Contract Number:
AC02-98CH10886
Resource Relation:
Patent File Date: 2012 Oct 24
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Works referenced in this record:

Semiconductor drift chamber — An application of a novel charge transport scheme
journal, September 1984
  • Gatti, Emilio; Rehak, Pavel
  • Nuclear Instruments and Methods in Physics Research, Vol. 225, Issue 3, p. 608-614
  • DOI: 10.1016/0167-5087(84)90113-3

Arrays of silicon drift detectors for an extraterrestrial X-ray spectrometer
journal, December 2010
  • Rehak, Pavel; Carini, Gabriella; Chen, Wei
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 624, Issue 2, p. 260-264
  • DOI: 10.1016/j.nima.2010.05.058