Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays
Abstract
A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1260240
- Patent Number(s):
- 9383452
- Application Number:
- 14/352,538
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- AC02-98CH10886
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Oct 24
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE
Citation Formats
Li, Zheng, and Chen, Wei. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays. United States: N. p., 2016.
Web.
Li, Zheng, & Chen, Wei. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays. United States.
Li, Zheng, and Chen, Wei. Tue .
"Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays". United States. https://www.osti.gov/servlets/purl/1260240.
@article{osti_1260240,
title = {Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays},
author = {Li, Zheng and Chen, Wei},
abstractNote = {A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {7}
}
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