Method for producing thin film electrodes
Abstract
The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO.sub.2 while simultaneously preventing formation of RuO.sub.2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO.sub.2.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1256011
- Patent Number(s):
- 9359223
- Application Number:
- 13/237,487
- Assignee:
- UCHICAGO ARGONNE, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Sep 20
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Narayanan, Manoj, Ma, Beihai, Balachandran, Uthamalingam, and Dorris, Stephen. Method for producing thin film electrodes. United States: N. p., 2016.
Web.
Narayanan, Manoj, Ma, Beihai, Balachandran, Uthamalingam, & Dorris, Stephen. Method for producing thin film electrodes. United States.
Narayanan, Manoj, Ma, Beihai, Balachandran, Uthamalingam, and Dorris, Stephen. Tue .
"Method for producing thin film electrodes". United States. https://www.osti.gov/servlets/purl/1256011.
@article{osti_1256011,
title = {Method for producing thin film electrodes},
author = {Narayanan, Manoj and Ma, Beihai and Balachandran, Uthamalingam and Dorris, Stephen},
abstractNote = {The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO.sub.2 while simultaneously preventing formation of RuO.sub.2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO.sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Sol−Gel Synthesis of High-Quality SrRuO 3 Thin-Film Electrodes Suppressing the Formation of Detrimental RuO 2 and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films
journal, January 2011
- Narayanan, Manoj; Tong, Sheng; Koritala, Rachel
- Chemistry of Materials, Vol. 23, Issue 1