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Title: Polarization induced doped transistor

Abstract

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Inventors:
 [1]; ; ; ; ;
  1. (Grace)
Issue Date:
Research Org.:
University of Notre Dame du Lac, Notre Dame, IN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1255955
Patent Number(s):
9,362,389
Application Number:
14/470,569
Assignee:
University of Notre Dame du Lac (Notre Dame, IN)
DOE Contract Number:  
AR0000454
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 27
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Xing, Huili, Jena, Debdeep, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, and Hu, Zongyang. Polarization induced doped transistor. United States: N. p., 2016. Web.
Xing, Huili, Jena, Debdeep, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, & Hu, Zongyang. Polarization induced doped transistor. United States.
Xing, Huili, Jena, Debdeep, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, and Hu, Zongyang. Tue . "Polarization induced doped transistor". United States. https://www.osti.gov/servlets/purl/1255955.
@article{osti_1255955,
title = {Polarization induced doped transistor},
author = {Xing, Huili and Jena, Debdeep and Nomoto, Kazuki and Song, Bo and Zhu, Mingda and Hu, Zongyang},
abstractNote = {A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

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