Title: Polarization induced doped transistor

Abstract

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Inventors:

Xing, Huili ^[1]; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

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1. (Grace)

Issue Date:

2016-06-07

Research Org.:

University of Notre Dame du Lac, Notre Dame, IN (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1255955

Patent Number(s):

9362389

Application Number:

14/470,569

Assignee:

University of Notre Dame du Lac (Notre Dame, IN)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/41758 - {for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
H01L29/2003 - {Nitride compounds}
H01L21/7813 - {leaving a reusable substrate, e.g. epitaxial lift off}
H01L29/517 - {the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L21/3245 - {of AIIIBV compounds}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}
H01L29/0843 - {Source or drain regions of field-effect devices}
H01L29/7788 - {Vertical transistors}
H01L29/0619 - {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
H01L29/8083 - {Vertical transistors
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/201 - including two or more compounds {, e.g. alloys
H01L21/26546 - {of electrically active species}
H01L29/1095 - {Body region, i.e. base region, of DMOS transistors or IGBTs

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DOE Contract Number:  

AR0000454

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Aug 27

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS