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Title: Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production

Abstract

Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1255953
Patent Number(s):
9,362,429
Application Number:
14/266,213
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Apr 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Lany, Stephan. Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production. United States: N. p., 2016. Web.
Lany, Stephan. Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production. United States.
Lany, Stephan. Tue . "Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production". United States. https://www.osti.gov/servlets/purl/1255953.
@article{osti_1255953,
title = {Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production},
author = {Lany, Stephan},
abstractNote = {Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

Patent:

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Works referenced in this record:

Photovoltaic properties of SnS based solar cells
journal, November 2006

  • Ramakrishna Reddy, K. T.; Koteswara Reddy, N.; Miles, R. W.
  • Solar Energy Materials and Solar Cells, Vol. 90, Issue 18-19, p. 3041-3046
  • DOI: 10.1016/j.solmat.2006.06.012

Investigations on SnS
journal, October 1961

  • Albers, W.; Haas, C.; Vink, H. J.
  • Journal of Applied Physics, Vol. 32, Issue 10
  • DOI: 10.1063/1.1777047

Band structures of Cu2ZnSnS4 and Cu2ZnSnSe4 from many-body methods
journal, June 2011

  • Botti, Silvana; Kammerlander, David; Marques, Miguel A. L.
  • Applied Physics Letters, Vol. 98, Issue 24
  • DOI: 10.1063/1.3600060

Quasiparticle band structure based on a generalized Kohn-Sham scheme
journal, September 2007


SnS thin-films by RF sputtering at room temperature
journal, August 2011

  • Hartman, Katy; Johnson, J. L.; Bertoni, Mariana I.
  • Thin Solid Films, Vol. 519, Issue 21, p. 7421-7424
  • DOI: 10.1016/j.tsf.2010.12.186

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
journal, December 2008


Halogen n-type doping of chalcopyrite semiconductors
journal, January 2005

  • Lany, Stephan; Zhao, Yu-Jun; Persson, Clas
  • Applied Physics Letters, Vol. 86, Issue 4
  • DOI: 10.1063/1.1854218

Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO
journal, June 2007


Thermally evaporated thin films of SnS for application in solar cell devices
journal, July 2009

  • Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume
  • Thin Solid Films, Vol. 517, Issue 17, p. 4702-4705
  • DOI: 10.1016/j.tsf.2009.03.003

Characterization of vacuum-evaporated tin sulfide film for solar cell materials
journal, September 1994

  • Noguchi, Hidenori; Setiyadi, Agus; Tanamura, Hiromasa
  • Solar Energy Materials and Solar Cells, Vol. 35, p. 325-331
  • DOI: 10.1016/0927-0248(94)90158-9

Photovoltaic properties of SnS based solar cells
journal, November 2006

  • Ramakrishna Reddy, K. T.; Koteswara Reddy, N.; Miles, R. W.
  • Solar Energy Materials and Solar Cells, Vol. 90, Issue 18-19, p. 3041-3046
  • DOI: 10.1016/j.solmat.2006.06.012

Atomic Layer Deposition of Tin Monosulfide Thin Films
journal, September 2011

  • Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae
  • Advanced Energy Materials, Vol. 1, Issue 6, p. 1116-1125
  • DOI: 10.1002/aenm.201100330

Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells
journal, May 2011

  • Sugiyama, Mutsumi; Murata, Yoshitsuna; Shimizu, Tsubasa
  • Japanese Journal of Applied Physics, Vol. 50, Issue 5
  • DOI: 10.1143/JJAP.50.05FH03

Quasiparticle Self-Consistent G W Theory
journal, June 2006


Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
journal, January 2012

  • Vidal, Julien; Lany, Stephan; d’Avezac, Mayeul
  • Applied Physics Letters, Vol. 100, Issue 3
  • DOI: 10.1063/1.3675880

Electrical and optical stimulation of luminescence in Ca1−xCdxS
journal, April 1994


Materials Availability Expands the Opportunity for Large-Scale Photovoltaics Deployment
journal, March 2009

  • Wadia, Cyrus; Alivisatos, A. Paul; Kammen, Daniel M.
  • Environmental Science & Technology, Vol. 43, Issue 6
  • DOI: 10.1021/es8019534

Special quasirandom structures
journal, July 1990


Structural and electronic modification of photovoltaic SnS by alloying
journal, March 2014

  • Vidal, Julien; Lany, Stephan; Francis, Jason
  • Journal of Applied Physics, Vol. 115, Issue 11
  • DOI: 10.1063/1.4868974