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Title: Thin film bismuth iron oxides useful for piezoelectric devices

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
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Issue Date:
OSTI Identifier:
The Regents of the University of California (Oakland, CA) LBNL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2010 Oct 29
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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