Thin film bismuth iron oxides useful for piezoelectric devices
Abstract
The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1255124
- Patent Number(s):
- 9356224
- Application Number:
- 12/916,209
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Oct 29
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Zeches, Robert J., Martin, Lane W., and Ramesh, Ramamoorthy. Thin film bismuth iron oxides useful for piezoelectric devices. United States: N. p., 2016.
Web.
Zeches, Robert J., Martin, Lane W., & Ramesh, Ramamoorthy. Thin film bismuth iron oxides useful for piezoelectric devices. United States.
Zeches, Robert J., Martin, Lane W., and Ramesh, Ramamoorthy. Tue .
"Thin film bismuth iron oxides useful for piezoelectric devices". United States. https://www.osti.gov/servlets/purl/1255124.
@article{osti_1255124,
title = {Thin film bismuth iron oxides useful for piezoelectric devices},
author = {Zeches, Robert J. and Martin, Lane W. and Ramesh, Ramamoorthy},
abstractNote = {The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}
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