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Title: Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1254850
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL) ANL
Patent Number(s):
9,355,761
Application Number:
13/250,926
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2014 Jan 02
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

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journal, October 2001

Densification of the PLZT Films Derived from Polymer-Modified Solution by Tailoring Annealing Conditions
journal, March 2007

Development of PLZT dielectrics on base metal foils for embedded capacitors
journal, January 2010

Improved dielectric properties of lead lanthanum zirconate titanate thin films on copper substrates
journal, January 2010

Single-Step Deposition of Gel-Derived Lead Zirconate Titanate Films: Critical Thickness and Gel Film to Ceramic Film Conversion
journal, November 2002

Single‐Step Dip Coating of Crack‐Free BaTiO3 Films >1 μm Thick: Effect of Poly(vinylpyrrolidone) on Critical Thickness
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journal, July 2010
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journal, June 2009
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