Title: Method for fabrication of crack-free ceramic dielectric films

Abstract

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Inventors:

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

Issue Date:

2016-05-31

Research Org.:

Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1254850

Patent Number(s):

9355761

Application Number:

13/250,926

Assignee:

UCHICAGO ARGONNE, LLC (Chicago, IL)

Patent Classifications (CPCs):

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C04B35/634 - Polymers
C04B35/493 - containing also other lead compounds
C04B2235/3213 - Strontium oxides or oxide-forming salts thereof

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/3105 - After-treatment
H01L21/02186 - {the material containing titanium, e.g. TiO2}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/208 - {with use of metal first}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES

H01B19/04 - Treating the surfaces, e.g. applying coatings

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/1216 - {Metal oxides

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C04B35/624 - Sol-gel processing

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02356 - {treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer}
H01L21/02189 - {the material containing zirconium, e.g. ZrO2}
H01L28/55 - {with a dielectric comprising a perovskite structure material}
H01L21/02194 - {the material containing more than one metal element}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/24975 - No layer or component greater than 5 mils thick

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C04B2235/6562 - Heating rate
C04B2235/3227 - Lanthanum oxide or oxide-forming salts thereof

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02197 - {the material having a perovskite structure, e.g. BaTiO3}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C04B35/4682 - {based on BaTiO3 perovskite phase}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/1254 - {Sol or sol-gel processing}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02282 - {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
H01L21/02118 - {carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/1283 - {Control of temperature, e.g. gradual temperature increase, modulation of temperature}
C23C18/1241 - {Metallic substrates}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02192 - {the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/1225 - {Deposition of multilayers of inorganic material}
C23C18/1295 - {with after-treatment of the deposited inorganic material}

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Jan 02

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE