Title: Method for fabrication of crack-free ceramic dielectric films

Abstract

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Inventors:

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

Issue Date:

2016-05-31

Research Org.:

Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1254850

Patent Number(s):

9,355,761

Application Number:

13/250,926

Assignee:

UCHICAGO ARGONNE, LLC (Chicago, IL)

DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Jan 02

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE