Method for fabrication of crack-free ceramic dielectric films
Abstract
The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1254850
- Patent Number(s):
- 9355761
- Application Number:
- 13/250,926
- Assignee:
- UCHICAGO ARGONNE, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Jan 02
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Ma, Beihai, Narayanan, Manoj, Balachandran, Uthamalingam, Chao, Sheng, and Liu, Shanshan. Method for fabrication of crack-free ceramic dielectric films. United States: N. p., 2016.
Web.
Ma, Beihai, Narayanan, Manoj, Balachandran, Uthamalingam, Chao, Sheng, & Liu, Shanshan. Method for fabrication of crack-free ceramic dielectric films. United States.
Ma, Beihai, Narayanan, Manoj, Balachandran, Uthamalingam, Chao, Sheng, and Liu, Shanshan. Tue .
"Method for fabrication of crack-free ceramic dielectric films". United States. https://www.osti.gov/servlets/purl/1254850.
@article{osti_1254850,
title = {Method for fabrication of crack-free ceramic dielectric films},
author = {Ma, Beihai and Narayanan, Manoj and Balachandran, Uthamalingam and Chao, Sheng and Liu, Shanshan},
abstractNote = {The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}
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