Targets and processes for fabricating same
Abstract
In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 .mu.m. In particular examples, the distance is less than about 1 .mu.m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.
- Inventors:
- Issue Date:
- Research Org.:
- Board of Regents of the Nevada System of Higher Education, on behalf of the University of Nevada, Reno, NV (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1253289
- Patent Number(s):
- 9345119
- Application Number:
- 13/839,973
- Assignee:
- Board of Regents of the Nevada System of Higher Education, on behalf of the University of Nevada, Reno (Reno, NV)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
- DOE Contract Number:
- FC52-01NV14050
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Mar 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 36 MATERIALS SCIENCE
Citation Formats
Adams, Jesse D, Malekos, Steven, Le Galloudec, Nathalie, Korgan, Grant, Cowan, Thomas, and Sentoku, Yasuhiko. Targets and processes for fabricating same. United States: N. p., 2016.
Web.
Adams, Jesse D, Malekos, Steven, Le Galloudec, Nathalie, Korgan, Grant, Cowan, Thomas, & Sentoku, Yasuhiko. Targets and processes for fabricating same. United States.
Adams, Jesse D, Malekos, Steven, Le Galloudec, Nathalie, Korgan, Grant, Cowan, Thomas, and Sentoku, Yasuhiko. Tue .
"Targets and processes for fabricating same". United States. https://www.osti.gov/servlets/purl/1253289.
@article{osti_1253289,
title = {Targets and processes for fabricating same},
author = {Adams, Jesse D and Malekos, Steven and Le Galloudec, Nathalie and Korgan, Grant and Cowan, Thomas and Sentoku, Yasuhiko},
abstractNote = {In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 .mu.m. In particular examples, the distance is less than about 1 .mu.m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}
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