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Title: Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like

Abstract

A method for synthesizing I-III-VI.sub.2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.

Inventors:
;
Issue Date:
Research Org.:
Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1252444
Patent Number(s):
9,334,581
Application Number:
13/658,591
Assignee:
Consolidated Nuclear Security, LLC (Reston, VA) Fisk University (Nashville, TN)
DOE Contract Number:  
AC05-00OR22800
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 23
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Stowe, Ashley, and Burger, Arnold. Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like. United States: N. p., 2016. Web.
Stowe, Ashley, & Burger, Arnold. Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like. United States.
Stowe, Ashley, and Burger, Arnold. Tue . "Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like". United States. https://www.osti.gov/servlets/purl/1252444.
@article{osti_1252444,
title = {Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like},
author = {Stowe, Ashley and Burger, Arnold},
abstractNote = {A method for synthesizing I-III-VI.sub.2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}

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Works referenced in this record:

The Ag-Ga (Silver-Gallium) system
journal, August 1990


Growth and properties of LiGaX2 (X = S, Se, Te) single crystals for nonlinear optical applications in the mid-IR
journal, April 2003

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LiGaTe2:  A New Highly Nonlinear Chalcopyrite Optical Crystal for the Mid-IR
journal, June 2005

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