Methods for resistive switching of memristors

Mickel, Patrick R.; James, Conrad D.; Lohn, Andrew; Marinella, Matthew; Hsia, Alexander H.

Title: Methods for resistive switching of memristors

Abstract

The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

Inventors:: Mickel, Patrick R.; James, Conrad D.; Lohn, Andrew; Marinella, Matthew; Hsia, Alexander H.

Issue Date:: Tue May 10 00:00:00 EDT 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1252204

Patent Number(s):: 9336870

Application Number:: 14/612,958

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

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G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C13/0011 - {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]}
G11C13/004 - {Reading or sensing circuits or methods}
G11C13/0069 - {Writing or programming circuits or methods}
G11C2213/15 - Current-voltage curve

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Feb 03

Country of Publication:: United States

Language:: English

Subject:: 97 MATHEMATICS AND COMPUTING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

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                    Mickel, Patrick R., James, Conrad D., Lohn, Andrew, Marinella, Matthew, and Hsia, Alexander H. Methods for resistive switching of memristors.  United States: N. p., 2016. 
        Web.

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                    Mickel, Patrick R., James, Conrad D., Lohn, Andrew, Marinella, Matthew, & Hsia, Alexander H. Methods for resistive switching of memristors.  United States.

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                    Mickel, Patrick R., James, Conrad D., Lohn, Andrew, Marinella, Matthew, and Hsia, Alexander H. Tue .  
        "Methods for resistive switching of memristors".  United States.  https://www.osti.gov/servlets/purl/1252204.

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@article{osti_1252204,

  title        = {Methods for resistive switching of memristors},

  author       = {Mickel, Patrick R. and James, Conrad D. and Lohn, Andrew and Marinella, Matthew and Hsia, Alexander H.},

  abstractNote = {The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue May 10 00:00:00 EDT 2016},

  month        = {Tue May 10 00:00:00 EDT 2016}

}

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URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20140027705

Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
patent, October 2006

Avanzino, Steven C.; Tran, Minh Quoc
US Patent Document 7,129,133
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7129133

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Title: Methods for resistive switching of memristors

Abstract

Citation Formats

Physical modeling of voltage-driven resistive switching in oxide RRAM conference, October 2012

Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7 conference, May 2011

SPICE modeling of memristors conference, May 2011

Understanding switching variability and random telegraph noise in resistive RAM conference, December 2013

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament journal, January 2013

Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance journal, September 2014

Overview of candidate device technologies for storage-class memory journal, July 2008

Theory of the oxidation of metals journal, January 1949

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor journal, August 2011

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories journal, July 2013

Memristive devices and systems journal, January 1976

Memristor-The missing circuit element journal, January 1971

Emerging non-volatile memories: magnetic and resistive technologies journal, February 2013

Periodicity and dissipativity for memristor-based mixed time-varying delayed neural networks via differential inclusions journal, September 2014

Programmable CMOS/Memristor Threshold Logic journal, March 2013

An innovative sensing architecture for multilevel Flash memory conference, October 2012

Inside story of ferroelectric memories journal, March 2012

Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance journal, January 2013

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM journal, August 2012

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper) journal, July 2009

Integration of nanoscale memristor synapses in neuromorphic computing architectures journal, September 2013

Nanoscale Memristor Device as Synapse in Neuromorphic Systems journal, April 2010

Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon journal, February 2013

Memristor-based multilevel memory conference, February 2010

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications journal, December 2011

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film journal, March 2009

TEAM: ThrEshold Adaptive Memristor Model journal, January 2013

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory journal, January 2010

Filament diffusion model for simulating reset and retention processes in RRAM journal, July 2011

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling journal, September 2012

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM conference, December 2008

Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications conference, December 2010

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures journal, July 2011

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation journal, February 2014

Complementary resistive switches for passive nanocrossbar memories journal, April 2010

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode journal, September 2010

A CMOS Compatible, Forming Free TaOx ReRAM journal, August 2013

Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory journal, June 2014

Degenerate resistive switching and ultrahigh density storage in resistive memory journal, September 2014

Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching journal, October 2013

Mechanism of electrical shorting failure mode in resistive switching journal, July 2014

Modeling of filamentary resistive memory by concentric cylinders with variable conductivity journal, November 2014

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region” journal, August 2013

Impact of Joule heating on the microstructure of nanoscale TiO 2 resistive switching devices journal, April 2013

A read-monitored write circuit for 1T1M multi-level memristor memories conference, May 2011

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor journal, November 2011

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors journal, February 2012

A physical model of switching dynamics in tantalum oxide memristive devices journal, June 2013

Detection and characterization of multi-filament evolution during resistive switching journal, August 2014

Isothermal Switching and Detailed Filament Evolution in Memristive Systems journal, April 2014

Memristive switching: physical mechanisms and applications journal, April 2014

Multilayer memristive/memcapacitive devices with engineered conduction fronts journal, June 2013

Cramming More Components Onto Integrated Circuits journal, January 1998

Memristor-Based Chaotic Circuits journal, January 2009

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study journal, September 2012

Exploring variability and reliability of multi-level STT-MRAM cells conference, June 2012

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure journal, September 2013

Resistive switching characteristics of ultra-thin TiOx journal, July 2011

Experimental demonstration of associative memory with memristive neural networks journal, September 2010

A scalable neuristor built with Mott memristors journal, December 2012

Switching dynamics in titanium dioxide memristive devices journal, October 2009

Random Telegraph Signal noise properties of HfOx RRAM in high resistive state conference, September 2012

HP Memristor mathematical model for periodic signals and DC conference, August 2010

An Energy-Efficient Memristive Threshold Logic Circuit journal, April 2012

Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications journal, March 2014

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors journal, November 2011

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K journal, March 2013

Exponential ionic drift: fast switching and low volatility of thin-film memristors journal, November 2008

The missing memristor found journal, May 2008

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors journal, March 2012

Thermal Conductivity of Titanium Carbide, Zirconium Carbide, and Titanium Nitride at High Temperatures journal, February 1964

Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM journal, November 2010

Sub-nanosecond switching of a tantalum oxide memristor journal, November 2011

Nanoionics-based resistive switching memories journal, November 2007

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges journal, July 2009

Retention Model for High-Density ReRAM conference, May 2012

Metal–Oxide RRAM journal, June 2012

Physical modeling of voltage-driven resistive switching in oxide RRAM
conference, October 2012

Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7
conference, May 2011

SPICE modeling of memristors
conference, May 2011

Understanding switching variability and random telegraph noise in resistive RAM
conference, December 2013

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
journal, January 2013

Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance
journal, September 2014

Overview of candidate device technologies for storage-class memory
journal, July 2008

Theory of the oxidation of metals
journal, January 1949

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
journal, August 2011

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
journal, July 2013

Memristive devices and systems
journal, January 1976

Memristor-The missing circuit element
journal, January 1971

Emerging non-volatile memories: magnetic and resistive technologies
journal, February 2013

Periodicity and dissipativity for memristor-based mixed time-varying delayed neural networks via differential inclusions
journal, September 2014

Programmable CMOS/Memristor Threshold Logic
journal, March 2013

An innovative sensing architecture for multilevel Flash memory
conference, October 2012

Inside story of ferroelectric memories
journal, March 2012

Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance
journal, January 2013

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
journal, August 2012

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)
journal, July 2009

Integration of nanoscale memristor synapses in neuromorphic computing architectures
journal, September 2013

Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010

Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon
journal, February 2013

Memristor-based multilevel memory
conference, February 2010

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
journal, December 2011

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
journal, March 2009

TEAM: ThrEshold Adaptive Memristor Model
journal, January 2013

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010

Filament diffusion model for simulating reset and retention processes in RRAM
journal, July 2011

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
journal, September 2012

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
conference, December 2008

Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications
conference, December 2010

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures
journal, July 2011

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation
journal, February 2014

Complementary resistive switches for passive nanocrossbar memories
journal, April 2010

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
journal, September 2010

A CMOS Compatible, Forming Free TaO_x ReRAM
journal, August 2013

Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory
journal, June 2014

Degenerate resistive switching and ultrahigh density storage in resistive memory
journal, September 2014

Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching
journal, October 2013

Mechanism of electrical shorting failure mode in resistive switching
journal, July 2014

Modeling of filamentary resistive memory by concentric cylinders with variable conductivity
journal, November 2014

Optimizing TaO_x memristor performance and consistency within the reactive sputtering “forbidden region”
journal, August 2013

Impact of Joule heating on the microstructure of nanoscale TiO ₂ resistive switching devices
journal, April 2013

A read-monitored write circuit for 1T1M multi-level memristor memories
conference, May 2011

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011

Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors
journal, February 2012

A physical model of switching dynamics in tantalum oxide memristive devices
journal, June 2013

Detection and characterization of multi-filament evolution during resistive switching
journal, August 2014

Isothermal Switching and Detailed Filament Evolution in Memristive Systems
journal, April 2014

Memristive switching: physical mechanisms and applications
journal, April 2014

Multilayer memristive/memcapacitive devices with engineered conduction fronts
journal, June 2013

Cramming More Components Onto Integrated Circuits
journal, January 1998

Memristor-Based Chaotic Circuits
journal, January 2009

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
journal, September 2012

Exploring variability and reliability of multi-level STT-MRAM cells
conference, June 2012

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
journal, September 2013

Resistive switching characteristics of ultra-thin TiO_x
journal, July 2011

Experimental demonstration of associative memory with memristive neural networks
journal, September 2010

A scalable neuristor built with Mott memristors
journal, December 2012

Switching dynamics in titanium dioxide memristive devices
journal, October 2009

Random Telegraph Signal noise properties of HfOx RRAM in high resistive state
conference, September 2012

HP Memristor mathematical model for periodic signals and DC
conference, August 2010

An Energy-Efficient Memristive Threshold Logic Circuit
journal, April 2012

Reactive sputtering of substoichiometric Ta₂O_x for resistive memory applications
journal, March 2014

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
journal, November 2011

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K
journal, March 2013

Exponential ionic drift: fast switching and low volatility of thin-film memristors
journal, November 2008

The missing memristor found
journal, May 2008

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
journal, March 2012

Thermal Conductivity of Titanium Carbide, Zirconium Carbide, and Titanium Nitride at High Temperatures
journal, February 1964

Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM
journal, November 2010

Sub-nanosecond switching of a tantalum oxide memristor
journal, November 2011

Nanoionics-based resistive switching memories
journal, November 2007

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

Retention Model for High-Density ReRAM
conference, May 2012

Metal–Oxide RRAM
journal, June 2012

Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012

Memristive devices for computing
journal, January 2013

Metal oxide memories based on thermochemical and valence change mechanisms
journal, February 2012