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Title: Methods for resistive switching of memristors

The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
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Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
Application Number:
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Resource Relation:
Patent File Date: 2015 Feb 03
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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