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Title: Methods for resistive switching of memristors

Abstract

The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1252204
Patent Number(s):
9,336,870
Application Number:
14/612,958
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Feb 03
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Mickel, Patrick R., James, Conrad D., Lohn, Andrew, Marinella, Matthew, and Hsia, Alexander H. Methods for resistive switching of memristors. United States: N. p., 2016. Web.
Mickel, Patrick R., James, Conrad D., Lohn, Andrew, Marinella, Matthew, & Hsia, Alexander H. Methods for resistive switching of memristors. United States.
Mickel, Patrick R., James, Conrad D., Lohn, Andrew, Marinella, Matthew, and Hsia, Alexander H. Tue . "Methods for resistive switching of memristors". United States. https://www.osti.gov/servlets/purl/1252204.
@article{osti_1252204,
title = {Methods for resistive switching of memristors},
author = {Mickel, Patrick R. and James, Conrad D. and Lohn, Andrew and Marinella, Matthew and Hsia, Alexander H.},
abstractNote = {The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}

Patent:

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