Methods for preparing colloidal nanocrystal-based thin films
Abstract
Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Pennsylvania, Philadelphia, PA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1252203
- Patent Number(s):
- 9336919
- Application Number:
- 13/969,863
- Assignee:
- The Trustees of the University of Pennsylvania (Philadelphia, PA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
- DOE Contract Number:
- SC0002158
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Aug 19
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Kagan, Cherie R., Fafarman, Aaron T., Choi, Ji-Hyuk, Koh, Weon-kyu, Kim, David K., Oh, Soong Ju, Lai, Yuming, Hong, Sung-Hoon, Saudari, Sangameshwar Rao, and Murray, Christopher B.. Methods for preparing colloidal nanocrystal-based thin films. United States: N. p., 2016.
Web.
Kagan, Cherie R., Fafarman, Aaron T., Choi, Ji-Hyuk, Koh, Weon-kyu, Kim, David K., Oh, Soong Ju, Lai, Yuming, Hong, Sung-Hoon, Saudari, Sangameshwar Rao, & Murray, Christopher B.. Methods for preparing colloidal nanocrystal-based thin films. United States.
Kagan, Cherie R., Fafarman, Aaron T., Choi, Ji-Hyuk, Koh, Weon-kyu, Kim, David K., Oh, Soong Ju, Lai, Yuming, Hong, Sung-Hoon, Saudari, Sangameshwar Rao, and Murray, Christopher B.. Tue .
"Methods for preparing colloidal nanocrystal-based thin films". United States. https://www.osti.gov/servlets/purl/1252203.
@article{osti_1252203,
title = {Methods for preparing colloidal nanocrystal-based thin films},
author = {Kagan, Cherie R. and Fafarman, Aaron T. and Choi, Ji-Hyuk and Koh, Weon-kyu and Kim, David K. and Oh, Soong Ju and Lai, Yuming and Hong, Sung-Hoon and Saudari, Sangameshwar Rao and Murray, Christopher B.},
abstractNote = {Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 10 00:00:00 EDT 2016},
month = {Tue May 10 00:00:00 EDT 2016}
}
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