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Title: Environmentally-assisted technique for transferring devices onto non-conventional substrates

Abstract

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Inventors:
; ;
Issue Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1252201
Patent Number(s):
9337169
Application Number:
14/340,425
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
SC0001060
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 24
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lee, Chi-Hwan, Kim, Dong Rip, and Zheng, Xiaolin. Environmentally-assisted technique for transferring devices onto non-conventional substrates. United States: N. p., 2016. Web.
Lee, Chi-Hwan, Kim, Dong Rip, & Zheng, Xiaolin. Environmentally-assisted technique for transferring devices onto non-conventional substrates. United States.
Lee, Chi-Hwan, Kim, Dong Rip, and Zheng, Xiaolin. Tue . "Environmentally-assisted technique for transferring devices onto non-conventional substrates". United States. https://www.osti.gov/servlets/purl/1252201.
@article{osti_1252201,
title = {Environmentally-assisted technique for transferring devices onto non-conventional substrates},
author = {Lee, Chi-Hwan and Kim, Dong Rip and Zheng, Xiaolin},
abstractNote = {A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}

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Works referenced in this record:

Moisture-assisted subcritical debonding of a polymer/metal interface
journal, February 2002


On the physics of moisture-induced cracking in metal-glass (copper-silica) interfaces
journal, September 2007


Stretchable and Foldable Silicon Integrated Circuits
journal, April 2008


Fabrication of Nanowire Electronics on Nonconventional Substrates by Water-Assisted Transfer Printing Method
journal, August 2011


Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates
journal, December 2012


Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics
journal, October 2013


Wafer-Scale Synthesis and Transfer of Graphene Films
journal, February 2010


Ultrathin silicon solar microcells for semitransparent, mechanically flexible and microconcentrator module designs
journal, October 2008