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Title: Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

Abstract

A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

Inventors:
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1252200
Patent Number(s):
9337365
Application Number:
13/912,137
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 06
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Nelson, Scott D. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path. United States: N. p., 2016. Web.
Nelson, Scott D. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path. United States.
Nelson, Scott D. Tue . "Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path". United States. https://www.osti.gov/servlets/purl/1252200.
@article{osti_1252200,
title = {Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path},
author = {Nelson, Scott D.},
abstractNote = {A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}

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Works referenced in this record:

ON-State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide
journal, January 2008