Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path
Abstract
A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1252200
- Patent Number(s):
- 9337365
- Application Number:
- 13/912,137
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jun 06
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
Citation Formats
Nelson, Scott D. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path. United States: N. p., 2016.
Web.
Nelson, Scott D. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path. United States.
Nelson, Scott D. Tue .
"Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path". United States. https://www.osti.gov/servlets/purl/1252200.
@article{osti_1252200,
title = {Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path},
author = {Nelson, Scott D.},
abstractNote = {A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 10 00:00:00 EDT 2016},
month = {Tue May 10 00:00:00 EDT 2016}
}
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