Electronic interconnects and devices with topological surface states and methods for fabricating same
Abstract
An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.
- Inventors:
- Issue Date:
- Research Org.:
- Princeton Univ., NJ (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1250439
- Patent Number(s):
- 9331020
- Application Number:
- 13/039,762
- Assignee:
- Princeton University (Princeton, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
- DOE Contract Number:
- FG02-07ER46419
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Mar 03
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Yazdani, Ali, Ong, N. Phuan, and Cava, Robert J. Electronic interconnects and devices with topological surface states and methods for fabricating same. United States: N. p., 2016.
Web.
Yazdani, Ali, Ong, N. Phuan, & Cava, Robert J. Electronic interconnects and devices with topological surface states and methods for fabricating same. United States.
Yazdani, Ali, Ong, N. Phuan, and Cava, Robert J. Tue .
"Electronic interconnects and devices with topological surface states and methods for fabricating same". United States. https://www.osti.gov/servlets/purl/1250439.
@article{osti_1250439,
title = {Electronic interconnects and devices with topological surface states and methods for fabricating same},
author = {Yazdani, Ali and Ong, N. Phuan and Cava, Robert J.},
abstractNote = {An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}
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