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Title: Graphene-on-semiconductor substrates for analog electronics

Abstract

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Inventors:
; ;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1248824
Patent Number(s):
9324804
Application Number:
14/222,163
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lagally, Max G., Cavallo, Francesca, and Rojas-Delgado, Richard. Graphene-on-semiconductor substrates for analog electronics. United States: N. p., 2016. Web.
Lagally, Max G., Cavallo, Francesca, & Rojas-Delgado, Richard. Graphene-on-semiconductor substrates for analog electronics. United States.
Lagally, Max G., Cavallo, Francesca, and Rojas-Delgado, Richard. Tue . "Graphene-on-semiconductor substrates for analog electronics". United States. https://www.osti.gov/servlets/purl/1248824.
@article{osti_1248824,
title = {Graphene-on-semiconductor substrates for analog electronics},
author = {Lagally, Max G. and Cavallo, Francesca and Rojas-Delgado, Richard},
abstractNote = {Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {4}
}

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Works referenced in this record:

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