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Title: Graphene-on-semiconductor substrates for analog electronics

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1248824
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
Patent Number(s):
9,324,804
Application Number:
14/222,163
Contract Number:
FG02-03ER46028
Resource Relation:
Patent File Date: 2014 Mar 21
Research Org:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Graphene grown on Ge(001) from atomic source
journal, August 2014

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
journal, April 2000
  • Prabhakaran, K.; Maeda, F.; Watanabe, Y.
  • Applied Physics Letters, Vol. 76, Issue 16, p. 2244-2246
  • DOI: 10.1063/1.126309

Mechanism of photo-stimulated processes in GeOx films
journal, January 1995

(Invited) Novel Electronic and Optoelectronic Devices in Germanium Integrated on Silicon
conference, January 2010
  • Saraswat, Krishna C.
  • ECS Transactions, Vol. 33, Issue 6, p. 101-108
  • DOI: 10.1149/1.3487538

High performance germanium MOSFETs
journal, December 2006
  • Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas
  • Materials Science and Engineering: B, Vol. 135, Issue 3, p. 242-249
  • DOI: 10.1016/j.mseb.2006.08.014

High-k/Ge MOSFETs for future nanoelectronics
journal, January 2008

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
journal, May 2008
  • Brunco, D. P.; De Jaeger, B.; Eneman, G.
  • Journal of The Electrochemical Society, Vol. 155, Issue 7, p. H552-H561
  • DOI: 10.1149/1.2919115

Ambient stability of chemically passivated germanium interfaces
journal, October 2003

Strained-Germanium Nanostructures for Infrared Photonics
journal, March 2014
  • Boztug, Cicek; Sánchez-Pérez, José R.; Cavallo, Francesca
  • ACS Nano, Vol. 8, Issue 4, p. 3136-3151
  • DOI: 10.1021/nn404739b

Nanopatterning of graphene with crystallographic orientation control
journal, August 2010

Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates
journal, February 2014

Etching and narrowing of graphene from the edges
journal, June 2010
  • Wang, Xinran; Dai, Hongjie
  • Nature Chemistry, Vol. 2, Issue 8, p. 661-665
  • DOI: 10.1038/nchem.719

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