Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

Title: Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

Inventors:: Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

Issue Date:: 2016-04-26

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1248821

Patent Number(s):: 9324898

Application Number:: 14/036,229

Assignee:: Alliance For Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0368 - including polycrystalline semiconductors
H01L21/02474 - {Sulfides}
H01L21/02562 - {Tellurides}
H01L21/02483 - {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L21/02502 - {consisting of two layers}
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1836 - {comprising a growth substrate not being an AIIBVI compound}
H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

Show less

DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013 Sep 25

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats


                    Albin, David S., Johnson, James Neil, Zhao, Yu, and Korevaar, Bastiaan Arie. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability.  United States: N. p., 2016. 
        Web.

Copy to clipboard


                    Albin, David S., Johnson, James Neil, Zhao, Yu, & Korevaar, Bastiaan Arie. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability.  United States.

Copy to clipboard


                    Albin, David S., Johnson, James Neil, Zhao, Yu, and Korevaar, Bastiaan Arie. Tue .  
        "Varying cadmium telluride growth temperature during deposition to increase solar cell reliability".  United States.  https://www.osti.gov/servlets/purl/1248821.

Copy to clipboard


                    
@article{osti_1248821,

  title        = {Varying cadmium telluride growth temperature during deposition to increase solar cell reliability},

  author       = {Albin, David S. and Johnson, James Neil and Zhao, Yu and Korevaar, Bastiaan Arie},

  abstractNote = {},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2016},

  month        = {4}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry
journal, January 2000

Lyahovitskaya, V.; Chernyak, L.; Greenberg, J.
Journal of Applied Physics, Vol. 88, Issue 7
https://doi.org/10.1063/1.1308065

CdTe grown under Cd/Te excess at very low temperatures for solar cells
journal, June 2013

Heisler, C.; Brückner, M.; Lind, F.
Journal of Applied Physics, Vol. 113, Issue 22
https://doi.org/10.1063/1.4809761

Transient Ion Drift Measurements of Polycrystalline CdTe PV Devices
conference, May 2006

Enzenroth, R. A.; Barth, K. L.; Sampath, W. S.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference
https://doi.org/10.1109/WCPEC.2006.279487

Accelerated stress testing and diagnostic analysis of degradation in CdTe solar cells
conference, August 2008

Albin, David S.
Solar Energy + Applications, SPIE Proceedings
https://doi.org/10.1117/12.795360

Film thickness and chemical processing effects on the stability of cadmium telluride solar cells
journal, December 2006

Albin, D. S.; Demtsu, S. H.; McMahon, T. J.
Thin Solid Films, Vol. 515, Issue 4, p. 2659-2668
https://doi.org/10.1016/j.tsf.2006.05.042

Precontact surface chemistry effects on CdS/CdTe solar cell performance and stability
conference, January 2000

Albin, D.; Levi, D.; Asher, S.
28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
https://doi.org/10.1109/PVSC.2000.915907

Stability study of CdS/CdTe solar cells made with Ag and Ni back-contacts
journal, November 2006

Demtsu, S. H.; Albin, D. S.; Pankow, J. W.
Solar Energy Materials and Solar Cells, Vol. 90, Issue 17, p. 2934-2943
https://doi.org/10.1016/j.solmat.2006.05.007

Fabrication procedures and process sensitivities for CdS/CdTe solar cells
journal, September 1999

Rose, Doug H.; Hasoon, Falah S.; Dhere, Ramesh G.
Progress in Photovoltaics: Research and Applications, Vol. 7, Issue 5, p. 331-340
https://doi.org/10.1002/(SICI)1099-159X(199909/10)7:5<331::AID-PIP257>3.0.CO;2-P

Similar Records in DOE Patents and OSTI.GOV collections:

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

Patent Carlson, David E [Yardley, PA]

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.
Full Text Available
Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

Patent McQuaid, James H [Livermore, CA]; Lavietes, Anthony D [Hayward, CA]

A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables themore » « less
Full Text Available
Method and making group IIB metal - telluride films and solar cells

Patent Basol, Bulent M [Redondo Beach, CA]; Kapur, Vijay K [Northridge, CA]

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell whichmore » « less
Full Text Available
Process for producing cadmium sulfide on a cadmium telluride surface

Patent Levi, Dean H [Lakewood, CO]; Nelson, Art J [Longmont, CO]; Ahrenkiel, Richard K [Lakewood, CO]

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmiummore » « less
Full Text Available
Increasing cell culture population doublings for long-term growth of finite life span human cell cultures

Patent Stampfer, Martha R; Garbe, James C

Cell culture media formulations for culturing human epithelial cells are herein described. Also described are methods of increasing population doublings in a cell culture of finite life span human epithelial cells and prolonging the life span of human cell cultures. Using the cell culture media disclosed alone and in combination with addition to the cell culture of a compound associated with anti-stress activity achieves extended growth of pre-stasis cells and increased population doublings and life span in human epithelial cell cultures.
Full Text Available

Similar Records

Title: Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

Citation Formats

Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry journal, January 2000

CdTe grown under Cd/Te excess at very low temperatures for solar cells journal, June 2013

Transient Ion Drift Measurements of Polycrystalline CdTe PV Devices conference, May 2006

Accelerated stress testing and diagnostic analysis of degradation in CdTe solar cells conference, August 2008

Film thickness and chemical processing effects on the stability of cadmium telluride solar cells journal, December 2006

Precontact surface chemistry effects on CdS/CdTe solar cell performance and stability conference, January 2000

Stability study of CdS/CdTe solar cells made with Ag and Ni back-contacts journal, November 2006

Fabrication procedures and process sensitivities for CdS/CdTe solar cells journal, September 1999

Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry
journal, January 2000

CdTe grown under Cd/Te excess at very low temperatures for solar cells
journal, June 2013

Transient Ion Drift Measurements of Polycrystalline CdTe PV Devices
conference, May 2006

Accelerated stress testing and diagnostic analysis of degradation in CdTe solar cells
conference, August 2008

Film thickness and chemical processing effects on the stability of cadmium telluride solar cells
journal, December 2006

Precontact surface chemistry effects on CdS/CdTe solar cell performance and stability
conference, January 2000

Stability study of CdS/CdTe solar cells made with Ag and Ni back-contacts
journal, November 2006

Fabrication procedures and process sensitivities for CdS/CdTe solar cells
journal, September 1999