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Title: Apparatus and methods of measuring minority carrier lifetime using a liquid probe

Abstract

Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1246893
Patent Number(s):
9310396
Application Number:
14/198,215
Assignee:
Alliance For Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Jian. Apparatus and methods of measuring minority carrier lifetime using a liquid probe. United States: N. p., 2016. Web.
Li, Jian. Apparatus and methods of measuring minority carrier lifetime using a liquid probe. United States.
Li, Jian. Tue . "Apparatus and methods of measuring minority carrier lifetime using a liquid probe". United States. https://www.osti.gov/servlets/purl/1246893.
@article{osti_1246893,
title = {Apparatus and methods of measuring minority carrier lifetime using a liquid probe},
author = {Li, Jian},
abstractNote = {Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {4}
}

Works referenced in this record:

Minority carrier lifetime measurement in GaAs
journal, January 1974


Epitaxy of Dissimilar Materials
journal, August 1995


Unsupported Single‐Crystal Films of Germanium
journal, October 1964


Free‐standing thin film Ge single crystals grown by plasma‐enhanced chemical vapor deposition
journal, March 1984


A Complex Heterostructure to Achieve a Single-Crystalline MgO Film on GaAs (001)
journal, December 1998


Crystallinity and Epitaxy of Evaporated Germanium Films on Sodium Chloride Substrates
journal, January 1974


Structure and electronic properties of ionic nano-layers MBE-grown on III–V semiconductors
journal, May 2000


Morphology of thin NaCl films grown epitaxially on Ge(100)
journal, August 1993


Initial stages in the epitaxial growth of NaCl on Ge(001)
journal, April 1993


Preparation of Ge (100) Substrates for High-Quality Epitaxial Growth of Group IV Materials
journal, January 2003


Study of GaAs(001) Surfaces Treated in Aqueous HCl Solutions
journal, December 1997


Applications of admittance spectroscopy in photovoltaic devices beyond majority-carrier trapping defects
conference, June 2011


Coordinated electrical characterization system for photovoltaic devices
conference, June 2010