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Title: Apparatus and methods of measuring minority carrier lifetime using a liquid probe

Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.
Inventors:
Issue Date:
OSTI Identifier:
1246893
Assignee:
Alliance For Sustainable Energy, LLC (Golden, CO) NREL
Patent Number(s):
9,310,396
Application Number:
14/198,215
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2014 Mar 05
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Structure and electronic properties of ionic nano-layers MBE-grown on III–V semiconductors
journal, May 2000

Morphology of thin NaCl films grown epitaxially on Ge(100)
journal, August 1993

Initial stages in the epitaxial growth of NaCl on Ge(001)
journal, April 1993