Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion
Abstract
A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO.sub.2 composition.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1246836
- Patent Number(s):
- 9,312,342
- Application Number:
- 13/994,663
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Dec 16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Baker, L. Robert, Seo, Hyungtak, Hervier, Antoine, and Somorjai, Gabor A. Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion. United States: N. p., 2016.
Web.
Baker, L. Robert, Seo, Hyungtak, Hervier, Antoine, & Somorjai, Gabor A. Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion. United States.
Baker, L. Robert, Seo, Hyungtak, Hervier, Antoine, and Somorjai, Gabor A. Tue .
"Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion". United States. https://www.osti.gov/servlets/purl/1246836.
@article{osti_1246836,
title = {Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion},
author = {Baker, L. Robert and Seo, Hyungtak and Hervier, Antoine and Somorjai, Gabor A.},
abstractNote = {A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO.sub.2 composition.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {4}
}
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