Title: Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion

Abstract

A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO.sub.2 composition.

Inventors:

Baker, L. Robert; Seo, Hyungtak; Hervier, Antoine; Somorjai, Gabor A.

Issue Date:

2016-04-12

Research Org.:

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1246836

Patent Number(s):

9312342

Application Number:

13/994,663

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02565 - {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
H01L45/1625 - {by physical vapor deposition, e.g. sputtering}
H01L45/1233 - {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
H01L45/08 - {based on migration or redistribution of ionic species, e.g. anions, vacancies}
H01L27/2436 - {comprising multi-terminal selection components, e.g. transistors}
H01L21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L21/02576 - {N-type}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L45/1641 - {Modification of the switching material, e.g. post-treatment, doping}
H01L45/146 - {Binary metal oxides, e.g. TaOx}

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DOE Contract Number:  

AC02-05CH11231

Resource Type:

Patent

Resource Relation:

Patent File Date: 2011 Dec 16

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY