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  • Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion

Title: Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion

A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO.sub.2 composition.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1246836
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
Patent Number(s):
9,312,342
Application Number:
13/994,663
Contract Number:
AC02-05CH11231
Resource Relation:
Patent File Date: 2011 Dec 16
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Other works cited in this record:

Strong Interactions in Supported-Metal Catalysts
journal, March 1981

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