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Title: Multiple complementary gas distribution assemblies

Abstract

In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Applied Materials, Inc., Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1245459
Patent Number(s):
9,303,318
Application Number:
13/649,488
Assignee:
Applied Materials, Inc. (Santa Clara, CA)
DOE Contract Number:  
EE0003331
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ng, Tuoh-Bin, Melnik, Yuriy, Pang, Lily L, Tuncel, Eda, Nguyen, Son T, and Chen, Lu. Multiple complementary gas distribution assemblies. United States: N. p., 2016. Web.
Ng, Tuoh-Bin, Melnik, Yuriy, Pang, Lily L, Tuncel, Eda, Nguyen, Son T, & Chen, Lu. Multiple complementary gas distribution assemblies. United States.
Ng, Tuoh-Bin, Melnik, Yuriy, Pang, Lily L, Tuncel, Eda, Nguyen, Son T, and Chen, Lu. Tue . "Multiple complementary gas distribution assemblies". United States. https://www.osti.gov/servlets/purl/1245459.
@article{osti_1245459,
title = {Multiple complementary gas distribution assemblies},
author = {Ng, Tuoh-Bin and Melnik, Yuriy and Pang, Lily L and Tuncel, Eda and Nguyen, Son T and Chen, Lu},
abstractNote = {In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {4}
}

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