PLZT capacitor on glass substrate
Abstract
A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1244223
- Patent Number(s):
- 9299496
- Application Number:
- 14/873,532
- Assignee:
- Delphi Technologies, Inc. (Troy, MI) UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Oct 02
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; 36 MATERIALS SCIENCE
Citation Formats
Fairchild, Manuel Ray, Taylor, Ralph S., Berlin, Carl W., Wong, Celine Wk, Ma, Beihai, and Balachandran, Uthamalingam. PLZT capacitor on glass substrate. United States: N. p., 2016.
Web.
Fairchild, Manuel Ray, Taylor, Ralph S., Berlin, Carl W., Wong, Celine Wk, Ma, Beihai, & Balachandran, Uthamalingam. PLZT capacitor on glass substrate. United States.
Fairchild, Manuel Ray, Taylor, Ralph S., Berlin, Carl W., Wong, Celine Wk, Ma, Beihai, and Balachandran, Uthamalingam. Tue .
"PLZT capacitor on glass substrate". United States. https://www.osti.gov/servlets/purl/1244223.
@article{osti_1244223,
title = {PLZT capacitor on glass substrate},
author = {Fairchild, Manuel Ray and Taylor, Ralph S. and Berlin, Carl W. and Wong, Celine Wk and Ma, Beihai and Balachandran, Uthamalingam},
abstractNote = {A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 29 00:00:00 EDT 2016},
month = {Tue Mar 29 00:00:00 EDT 2016}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Ceramic capacitor having a bismuth-containing silver-doped dielectric of (Pb,La) (Zr,Ti)O.sub.3
patent, January 1979
- Maher, Galeb H.
- US Patent Document 4,135,224
Lead silicate based capacitor structures
patent, July 2000
- Laibowitz, Robert Benjamin; Shaw, Thomas M.
- US Patent Document 6,088,216
Method of fabricating an electronic package having underfill standoff
patent, October 2006
- Myers, Bruce A.; Ihms, David W.; Oman, Todd P.
- US Patent Document 7,118,940
Electronic package for image sensor, and the packaging method thereof
patent, June 2008
- Kim, Deok-Hoon; Lee, Hwan-Chul
- US Patent Document 7,384,818
Flip-chip packaging of a photo-sensor die on a transparent substrate
patent, February 2009
- Kim, Deok-Hoon
- US Patent Document 7,494,848
Image sensor camera module including a protruding portion and method of manufacturing the same
patent, November 2011
- Kim, Jin Kwan; Kim, Hwan Kyo
- US Patent Document 8,063,982
Method for fabrication of crack-free ceramic dielectric films
patent, February 2014
- Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng
- US Patent Document 8,647,737