Title: Diode having trenches in a semiconductor region

Abstract

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Inventors:

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

Issue Date:

Tue Mar 22 00:00:00 EDT 2016

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1243316

Patent Number(s):

9293538

Application Number:

14/082,618

Assignee:

Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/28264 - {the insulator being formed after the semiconductor body, the semiconductor being a III-V compound}
H01L29/1029 - {of field-effect transistors}
H01L29/2003 - {Nitride compounds}
H01L29/407 - {Recessed field plates, e.g. trench field plates, buried field plates}
H01L29/417 - carrying the current to be rectified, amplified or switched
H01L29/42316 - {for field-effect transistors}
H01L29/4236 - {within a trench, e.g. trench gate electrode, groove gate electrode}
H01L29/513 - {the variation being perpendicular to the channel plane}
H01L29/517 - {the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/872 - Schottky diodes
H01L29/8725 - {of the trench MOS barrier type [TMBS]}

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DOE Contract Number:  

AR0000123

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Nov 18

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION