skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Oriented bottom-up growth of armchair graphene nanoribbons on germanium

Abstract

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

Inventors:
;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1243035
Patent Number(s):
9,287,359
Application Number:
14/486,149
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
DOE Contract Number:  
SC0006414
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Sep 15
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Arnold, Michael Scott, and Jacobberger, Robert Michael. Oriented bottom-up growth of armchair graphene nanoribbons on germanium. United States: N. p., 2016. Web.
Arnold, Michael Scott, & Jacobberger, Robert Michael. Oriented bottom-up growth of armchair graphene nanoribbons on germanium. United States.
Arnold, Michael Scott, and Jacobberger, Robert Michael. Tue . "Oriented bottom-up growth of armchair graphene nanoribbons on germanium". United States. https://www.osti.gov/servlets/purl/1243035.
@article{osti_1243035,
title = {Oriented bottom-up growth of armchair graphene nanoribbons on germanium},
author = {Arnold, Michael Scott and Jacobberger, Robert Michael},
abstractNote = {Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {3}
}

Patent:

Save / Share:

Works referenced in this record:

Graphene grown on Ge(001) from atomic source
journal, August 2014


Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014


Direct Growth of Graphene Film on Germanium Substrate
journal, August 2013

  • Wang, Gang; Zhang, Miao; Zhu, Yun
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02465

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
journal, April 2000

  • Prabhakaran, K.; Maeda, F.; Watanabe, Y.
  • Applied Physics Letters, Vol. 76, Issue 16, p. 2244-2246
  • DOI: 10.1063/1.126309

Mechanism of photo-stimulated processes in GeOx films
journal, January 1995


Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
journal, September 2003

  • Wang, Dunwei; Wang, Qian; Javey, Ali
  • Applied Physics Letters, Vol. 83, Issue 12
  • DOI: 10.1063/1.1611644

(Invited) Novel Electronic and Optoelectronic Devices in Germanium Integrated on Silicon
conference, January 2010

  • Saraswat, Krishna C.
  • ECS Transactions, Vol. 33, Issue 6, p. 101-108
  • DOI: 10.1149/1.3487538

High performance germanium MOSFETs
journal, December 2006

  • Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas
  • Materials Science and Engineering: B, Vol. 135, Issue 3, p. 242-249
  • DOI: 10.1016/j.mseb.2006.08.014

Material potential and scalability challenges of germanium CMOS
conference, December 2011

  • Toriumi, A.; Lee, C. H.; Wang, S. K.
  • 2011 IEEE International Electron Devices Meeting (IEDM), 2011 International Electron Devices Meeting
  • DOI: 10.1109/IEDM.2011.6131631

High-k/Ge MOSFETs for future nanoelectronics
journal, January 2008


Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
journal, May 2008

  • Brunco, D. P.; De Jaeger, B.; Eneman, G.
  • Journal of The Electrochemical Society, Vol. 155, Issue 7, p. H552-H561
  • DOI: 10.1149/1.2919115

A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
conference, January 2002

  • Chi On Chui, ; Chi, D.
  • IEEE International Electron Devices Meeting, Digest. International Electron Devices Meeting,
  • DOI: 10.1109/IEDM.2002.1175872

Ambient stability of chemically passivated germanium interfaces
journal, October 2003


Strained-Germanium Nanostructures for Infrared Photonics
journal, March 2014

  • Boztug, Cicek; Sánchez-Pérez, José R.; Cavallo, Francesca
  • ACS Nano, Vol. 8, Issue 4, p. 3136-3151
  • DOI: 10.1021/nn404739b

Synthesis, Characterization, and Properties of Large-Area Graphene Films
journal, January 2009

  • Li, Xuesong; Cai, Weiwei; Jung, In Hwa
  • ECS Transactions, Vol. 19, Issue 5, p. 41-52
  • DOI: 10.1149/1.3119526

Nanopatterning of graphene with crystallographic orientation control
journal, August 2010


Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates
journal, February 2014


Etching and narrowing of graphene from the edges
journal, June 2010

  • Wang, Xinran; Dai, Hongjie
  • Nature Chemistry, Vol. 2, Issue 8, p. 661-665
  • DOI: 10.1038/nchem.719