Oriented bottom-up growth of armchair graphene nanoribbons on germanium

Title: Oriented bottom-up growth of armchair graphene nanoribbons on germanium

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

Inventors:: Arnold, Michael Scott; Jacobberger, Robert Michael

Issue Date:: 2016-03-15

OSTI Identifier:: 1243035

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI) DOESC

Patent Number(s):: 9,287,359

Application Number:: 14/486,149

Contract Number:: SC0006414

Resource Relation:: Patent File Date: 2014 Sep 15

Research Org:: Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

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Other works cited in this record:

Graphene grown on Ge(001) from atomic source
journal, August 2014

Lippert, Gunther; Dąbrowski, Jarek; Schroeder, Thomas
Carbon, Vol. 75, p. 104-112
DOI: 10.1016/j.carbon.2014.03.042

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014

Lee, J.-H.; Lee, E. K.; Joo, W.-J.
Science, Vol. 344, Issue 6181, p. 286-289
DOI: 10.1126/science.1252268

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
journal, April 2000

Prabhakaran, K.; Maeda, F.; Watanabe, Y.
Applied Physics Letters, Vol. 76, Issue 16, p. 2244-2246
DOI: 10.1063/1.126309

Mechanism of photo-stimulated processes in GeO_x films
journal, January 1995

Nazarenkov, F. A.; Sterligov, V. A.
Thin Solid Films, Vol. 254, Issue 1-2, p. 164-168
DOI: 10.1016/0040-6090(94)06264-L

(Invited) Novel Electronic and Optoelectronic Devices in Germanium Integrated on Silicon
conference, January 2010

Saraswat, Krishna C.
ECS Transactions, Vol. 33, Issue 6, p. 101-108
DOI: 10.1149/1.3487538

High performance germanium MOSFETs
journal, December 2006

Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas
Materials Science and Engineering: B, Vol. 135, Issue 3, p. 242-249
DOI: 10.1016/j.mseb.2006.08.014

High-k/Ge MOSFETs for future nanoelectronics
journal, January 2008

Kamata, Yoshiki
Materials Today, Vol. 11, Issue 1-2, p. 30-38
DOI: 10.1016/S1369-7021(07)70350-4

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
journal, May 2008

Brunco, D. P.; De Jaeger, B.; Eneman, G.
Journal of The Electrochemical Society, Vol. 155, Issue 7, p. H552-H561
DOI: 10.1149/1.2919115

Ambient stability of chemically passivated germanium interfaces
journal, October 2003

Bodlaki, D.; Yamamoto, H.; Waldeck, D. H.
Surface Science, Vol. 543, Issue 1-3, p. 63-74
DOI: 10.1016/S0039-6028(03)00958-0

Strained-Germanium Nanostructures for Infrared Photonics
journal, March 2014

Boztug, Cicek; Sánchez-Pérez, José R.; Cavallo, Francesca
ACS Nano, Vol. 8, Issue 4, p. 3136-3151
DOI: 10.1021/nn404739b

Nanopatterning of graphene with crystallographic orientation control
journal, August 2010

Biró, László P.; Lambin, Philippe
Carbon, Vol. 48, Issue 10, p. 2677-2689
DOI: 10.1016/j.carbon.2010.04.013

Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates
journal, February 2014

Nemes-Incze, P.; Tapasztó, Levente; Magda, G. Zs.
Applied Surface Science, Vol. 291, p. 48-52
DOI: 10.1016/j.apsusc.2013.11.012

Etching and narrowing of graphene from the edges
journal, June 2010

Wang, Xinran; Dai, Hongjie
Nature Chemistry, Vol. 2, Issue 8, p. 661-665
DOI: 10.1038/nchem.719

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