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Title: Epitaxial growth of CZT(S,Se) on silicon

Abstract

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1243034
Patent Number(s):
9287426
Application Number:
14/499,788
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Sep 29
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Bojarczuk, Nestor A., Gershon, Talia S., Guha, Supratik, Shin, Byungha, and Zhu, Yu. Epitaxial growth of CZT(S,Se) on silicon. United States: N. p., 2016. Web.
Bojarczuk, Nestor A., Gershon, Talia S., Guha, Supratik, Shin, Byungha, & Zhu, Yu. Epitaxial growth of CZT(S,Se) on silicon. United States.
Bojarczuk, Nestor A., Gershon, Talia S., Guha, Supratik, Shin, Byungha, and Zhu, Yu. Tue . "Epitaxial growth of CZT(S,Se) on silicon". United States. https://www.osti.gov/servlets/purl/1243034.
@article{osti_1243034,
title = {Epitaxial growth of CZT(S,Se) on silicon},
author = {Bojarczuk, Nestor A. and Gershon, Talia S. and Guha, Supratik and Shin, Byungha and Zhu, Yu},
abstractNote = {Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {3}
}

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Works referenced in this record:

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4
journal, March 2010


The path towards a high-performance solution-processed kesterite solar cell
journal, June 2011


On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum
journal, January 2010


Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation
journal, December 2008


Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation
conference, June 2010


Epitaxial growth of Cu2ZnSnS4 thin films by pulsed laser deposition
journal, September 2006


Existence and removal of Cu 2 Se second phase in coevaporated Cu 2 ZnSnSe 4 thin films
journal, March 2012