Title: Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

Abstract

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Inventors:

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

Issue Date:

2016-03-01

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1240427

Patent Number(s):

9276382

Application Number:

14/624,074

Assignee:

Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82B - NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C1/00539 - {Wet etching}
B81C2201/0114 - Electrochemical etching, anodic oxidation

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82B - NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS

B82B1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS

C25F3/12 - of semiconducting materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/30635 - {of AIIIBV compounds}
H01L33/007 - {comprising nitride compounds}
H01L33/18 - within the light emitting region

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/34333 - {with a well layer based on Ga

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Feb 17

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY