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Title: Programmable electroacoustic filter apparatus and method for its manufacture

Abstract

An acoustically coupled frequency selective radio frequency (RF) device is provided. The device includes a piezoelectric substrate overlain by a plurality of electrodes. The device further includes a pair of RF input terminals at least one of which is electrically connected to at least one of the electrodes, and a pair of output RF terminals, at least one of which is electrically connected to at least one other of the electrodes. At least one of the electrodes is electromechanically reconfigurable between a state in which it is closer to a face of the piezoelectric substrate and at least one state in which it is farther from the face of the piezoelectric substrate.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1240426
Patent Number(s):
9,276,557
Application Number:
13/932,859
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jul 01
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Nordquist, Christopher, Olsson, Roy H., Scott, Sean Michael, Wojciechowski, Kenneth, and Branch, Darren W. Programmable electroacoustic filter apparatus and method for its manufacture. United States: N. p., 2016. Web.
Nordquist, Christopher, Olsson, Roy H., Scott, Sean Michael, Wojciechowski, Kenneth, & Branch, Darren W. Programmable electroacoustic filter apparatus and method for its manufacture. United States.
Nordquist, Christopher, Olsson, Roy H., Scott, Sean Michael, Wojciechowski, Kenneth, and Branch, Darren W. Tue . "Programmable electroacoustic filter apparatus and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1240426.
@article{osti_1240426,
title = {Programmable electroacoustic filter apparatus and method for its manufacture},
author = {Nordquist, Christopher and Olsson, Roy H. and Scott, Sean Michael and Wojciechowski, Kenneth and Branch, Darren W.},
abstractNote = {An acoustically coupled frequency selective radio frequency (RF) device is provided. The device includes a piezoelectric substrate overlain by a plurality of electrodes. The device further includes a pair of RF input terminals at least one of which is electrically connected to at least one of the electrodes, and a pair of output RF terminals, at least one of which is electrically connected to at least one other of the electrodes. At least one of the electrodes is electromechanically reconfigurable between a state in which it is closer to a face of the piezoelectric substrate and at least one state in which it is farther from the face of the piezoelectric substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {3}
}

Patent:

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Works referenced in this record:

Filter technologies for converged RF-frontend architectures: SAW, BAW and beyond
conference, January 2010

  • Aigner, Robert
  • 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
  • DOI: 10.1109/SMIC.2010.5422990

Applications of surface acoustic and shallow bulk acoustic wave devices
journal, January 1989

  • Campbell, C.K.
  • Proceedings of the IEEE, Vol. 77, Issue 10, p. 1453-1484
  • DOI: 10.1109/5.40664

A Three-Pole 1.2–2.6-GHz RF MEMS Tunable Notch Filter With 40-dB Rejection and Bandwidth Control
journal, August 2012

  • Chih-Chieh Cheng, ; Rebeiz, G. M.
  • IEEE Transactions on Microwave Theory and Techniques, Vol. 60, Issue 8
  • DOI: 10.1109/TMTT.2012.2198231

Fully integrated switchable filter banks
conference, June 2012

  • Crespin, E. R.; Olsson, R. H.; Wojciechowski, K. E.
  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest
  • DOI: 10.1109/MWSYM.2012.6259652

RF MEMS Shunt Capacitive Switches Using AlN Compared to $\hbox{Si}_{3}\hbox{N}_{4}$ Dielectric
journal, October 2012

  • Fernandez-Bolanos Badia, Montserrat; Buitrago, Elizabeth; Ionescu, Adrian Mihai
  • Journal of Microelectromechanical Systems, Vol. 21, Issue 5
  • DOI: 10.1109/JMEMS.2012.2203101

Capacitive-piezoelectric AlN resonators with Q
conference, January 2011

  • Hung, Li-Wen; Nguyen, Clark T. -C.
  • 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS)
  • DOI: 10.1109/MEMSYS.2011.5734389

High-Frequency Lamb Wave Device Composed of LiNbO 3 Thin Film
journal, July 2009

  • Kadota, Michio; Ogami, Takashi; Yamamoto, Kansho
  • Japanese Journal of Applied Physics, Vol. 48, Issue 7
  • DOI: 10.1143/JJAP.48.07GG08

Improvement in temperature characteristics of plate wave resonator using rotated Y-cut LiTaO
conference, January 2011

  • Kando, Hajime; Watanabe, Munehisa; Kido, Shunsuke
  • 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS)
  • DOI: 10.1109/MEMSYS.2011.5734538

Capacitive frequency tuning of ALN micromechanical resonators
conference, June 2011

  • Kim, B.; Olsson, R. H.; Wojciechowski, K. E.
  • TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference
  • DOI: 10.1109/TRANSDUCERS.2011.5969665

High-Q tunable bandstop filters with adaptable bandwidth and pole allocation
conference, June 2011

  • Naglich, Eric J.; Lee, Juseop; Peroulis, Dimitrios
  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011, 2011 IEEE MTT-S International Microwave Symposium
  • DOI: 10.1109/MWSYM.2011.5972936

MEMS technology for timing and frequency control
journal, January 2007

  • Nguyen, Clark
  • IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Vol. 54, Issue 2, p. 251-270
  • DOI: 10.1109/TUFFC.2007.240

Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers
journal, June 2009

  • Olsson, R. H.; Wojciechowski, K. E.; Baker, M. S.
  • Journal of Microelectromechanical Systems, Vol. 18, Issue 3
  • DOI: 10.1109/JMEMS.2009.2020374

Electrically tunable and switchable film bulk acousitc resonator
conference, January 2004

  • Wei Pang,
  • Proceedings of the 2004 IEEE International Frequency Control Symposium and Exposition, 2004.
  • DOI: 10.1109/FREQ.2004.1418424

Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends
journal, July 2009

  • Piazza, Gianluca
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 4
  • DOI: 10.1116/1.3077276

Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators
conference, June 2009

  • Wojciechowski, K. E.; Olsson, R. H.; Tuck, M. R.
  • Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • DOI: 10.1109/SENSOR.2009.5285626