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Title: High ZT bismuth-doped perovskite thermoelectrics

Abstract

A bismuth-doped perovskite thermoelectric, comprising (Bi.sub.x, La.sub.0.1-x)SrTiO.sub.3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, ZT.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1239652
Patent Number(s):
9269880
Application Number:
14/179,731
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Feb 13
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Brown-Shaklee, Harlan James. High ZT bismuth-doped perovskite thermoelectrics. United States: N. p., 2016. Web.
Brown-Shaklee, Harlan James. High ZT bismuth-doped perovskite thermoelectrics. United States.
Brown-Shaklee, Harlan James. Tue . "High ZT bismuth-doped perovskite thermoelectrics". United States. https://www.osti.gov/servlets/purl/1239652.
@article{osti_1239652,
title = {High ZT bismuth-doped perovskite thermoelectrics},
author = {Brown-Shaklee, Harlan James},
abstractNote = {A bismuth-doped perovskite thermoelectric, comprising (Bi.sub.x, La.sub.0.1-x)SrTiO.sub.3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, ZT.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {2}
}

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Works referenced in this record:

High-temperature thermoelectric response of double-doped SrTiO 3 epitaxial films
journal, October 2010


Processing Technologies for High-Permittivity Thin Films in Capacitor Applications: Processing Technologies for Thin Films in Capacitor Applications
journal, December 2010


Permittivity scaling in Ba1−xSrxTiO3 thin films and ceramics
journal, February 2011