High ZT bismuth-doped perovskite thermoelectrics
Abstract
A bismuth-doped perovskite thermoelectric, comprising (Bi.sub.x, La.sub.0.1-x)SrTiO.sub.3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, ZT.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1239652
- Patent Number(s):
- 9269880
- Application Number:
- 14/179,731
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Feb 13
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Brown-Shaklee, Harlan James. High ZT bismuth-doped perovskite thermoelectrics. United States: N. p., 2016.
Web.
Brown-Shaklee, Harlan James. High ZT bismuth-doped perovskite thermoelectrics. United States.
Brown-Shaklee, Harlan James. Tue .
"High ZT bismuth-doped perovskite thermoelectrics". United States. https://www.osti.gov/servlets/purl/1239652.
@article{osti_1239652,
title = {High ZT bismuth-doped perovskite thermoelectrics},
author = {Brown-Shaklee, Harlan James},
abstractNote = {A bismuth-doped perovskite thermoelectric, comprising (Bi.sub.x, La.sub.0.1-x)SrTiO.sub.3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, ZT.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {2}
}
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Works referenced in this record:
High-temperature thermoelectric response of double-doped epitaxial films
journal, October 2010
- Ravichandran, J.; Siemons, W.; Oh, D. -W.
- Physical Review B, Vol. 82, Issue 16
Processing Technologies for High-Permittivity Thin Films in Capacitor Applications: Processing Technologies for Thin Films in Capacitor Applications
journal, December 2010
- Brennecka, Geoff L.; Ihlefeld, Jon F.; Maria, Jon-Paul
- Journal of the American Ceramic Society, Vol. 93, Issue 12
Permittivity scaling in Ba1−xSrxTiO3 thin films and ceramics
journal, February 2011
- Aygün, Seymen M.; Ihlefeld, Jon F.; Borland, William J.
- Journal of Applied Physics, Vol. 109, Issue 3
Complex Oxides Useful for Thermoelectric Energy Conversion
patent-application, March 2010
- Majumdar, Arunava; Ramesh, Ramamoorthy; Yu, Choongho
- US Patent Application 12/539135; 20100051079