Transparent ceramic photo-optical semiconductor high power switches

Title: Transparent ceramic photo-optical semiconductor high power switches

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Abstract

A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

Inventors:: Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

Issue Date:: 2016-01-19

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1235936

Patent Number(s):: 9240506

Application Number:: 12/633,671

Assignee:: Lawrence Livermore National Security, LLC

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1812 - {including only AIVBIV alloys, e.g. SiGe}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B35/62635 - {Mixing details}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/08 - in which radiation controls flow of current through the device, e.g. photoresistors

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B35/645 - Pressure sintering
C04B35/58 - based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1864 - {Annealing}
H01L31/035209 - {comprising a quantum structures}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/6023 - Gel casting

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1848 - {comprising nitride compounds, e.g. InGaN, InGaAlN}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B35/581 - based on aluminium nitride
C04B2235/3895 - Non-oxides with a defined oxygen content, e.g. SiOC, TiON
C04B2235/77 - Density
C04B35/62665 - {Flame, plasma or melting treatment}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B35/6269 - {Curing of mixtures}
C04B2235/9653 - Translucent or transparent ceramics other than alumina
C04B2235/5445 - submicron sized, i.e. from 0,1 to 1 micron
C04B35/5755 - {obtained by gas pressure sintering}
C04B2235/666 - Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
C04B2235/3272 - Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
C04B2235/3262 - Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
C04B35/6263 - {characterised by their solids loadings, i.e. the percentage of solids}
C04B2235/3239 - Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate

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DOE Contract Number:: AC52-07NA27344

Resource Type:: Patent

Resource Relation:: Patent File Date: 2009 Dec 08

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Werne, Roger W., Sullivan, James S., and Landingham, Richard L. Transparent ceramic photo-optical semiconductor high power switches.  United States: N. p., 2016. 
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                    Werne, Roger W., Sullivan, James S., & Landingham, Richard L. Transparent ceramic photo-optical semiconductor high power switches.  United States.

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                    Werne, Roger W., Sullivan, James S., and Landingham, Richard L. Tue .  
        "Transparent ceramic photo-optical semiconductor high power switches".  United States.  https://www.osti.gov/servlets/purl/1235936.

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@article{osti_1235936,

  title        = {Transparent ceramic photo-optical semiconductor high power switches},

  author       = {Werne, Roger W. and Sullivan, James S. and Landingham, Richard L.},

  abstractNote = {A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2016},

  month        = {1}

}

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