Transparent ceramic photo-optical semiconductor high power switches
Abstract
A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1235936
- Patent Number(s):
- 9240506
- Application Number:
- 12/633,671
- Assignee:
- Lawrence Livermore National Security, LLC
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2009 Dec 08
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Werne, Roger W., Sullivan, James S., and Landingham, Richard L. Transparent ceramic photo-optical semiconductor high power switches. United States: N. p., 2016.
Web.
Werne, Roger W., Sullivan, James S., & Landingham, Richard L. Transparent ceramic photo-optical semiconductor high power switches. United States.
Werne, Roger W., Sullivan, James S., and Landingham, Richard L. Tue .
"Transparent ceramic photo-optical semiconductor high power switches". United States. https://www.osti.gov/servlets/purl/1235936.
@article{osti_1235936,
title = {Transparent ceramic photo-optical semiconductor high power switches},
author = {Werne, Roger W. and Sullivan, James S. and Landingham, Richard L.},
abstractNote = {A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {1}
}
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Photo-conductive switch having an improved semiconductor structure
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