N-doping of organic semiconductors by bis-metallosandwich compounds
Abstract
The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
- Inventors:
- Issue Date:
- Research Org.:
- Georgia Tech Research Corporation, Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1234678
- Patent Number(s):
- 9,231,219
- Application Number:
- 14/126,319
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- DOE Contract Number:
- FG02-07ER46467
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Jun 13
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Barlow, Stephen, Qi, Yabing, Kahn, Antoine, Marder, Seth, Kim, Sang Bok, Mohapatra, Swagat K., and Guo, Song. N-doping of organic semiconductors by bis-metallosandwich compounds. United States: N. p., 2016.
Web.
Barlow, Stephen, Qi, Yabing, Kahn, Antoine, Marder, Seth, Kim, Sang Bok, Mohapatra, Swagat K., & Guo, Song. N-doping of organic semiconductors by bis-metallosandwich compounds. United States.
Barlow, Stephen, Qi, Yabing, Kahn, Antoine, Marder, Seth, Kim, Sang Bok, Mohapatra, Swagat K., and Guo, Song. Tue .
"N-doping of organic semiconductors by bis-metallosandwich compounds". United States. https://www.osti.gov/servlets/purl/1234678.
@article{osti_1234678,
title = {N-doping of organic semiconductors by bis-metallosandwich compounds},
author = {Barlow, Stephen and Qi, Yabing and Kahn, Antoine and Marder, Seth and Kim, Sang Bok and Mohapatra, Swagat K. and Guo, Song},
abstractNote = {The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {1}
}
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