N-doping of organic semiconductors by bis-metallosandwich compounds

Title: N-doping of organic semiconductors by bis-metallosandwich compounds

The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

Inventors:: Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

Issue Date:: 2016-01-05

OSTI Identifier:: 1234678

Assignee:: Georgia Tech Research Corporation (Atlanta, GA) CHO

Patent Number(s):: 9,231,219

Application Number:: 14/126,319

Contract Number:: FG02-07ER46467

Resource Relation:: Patent File Date: 2012 Jun 13

Research Org:: Georgia Tech Research Corporation, Atlanta, GA (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

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