Title: Tuning method for microresonators and microresonators made thereby

Abstract

A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material can be deposited on a facial surface of the element. The resonance of the element can be tuned by annealing the deposited film. Also disclosed are methods of applying a film on a resonator and annealing the film, thereby tuning one or more resonant properties of the resonator.

Inventors:

Henry, Michael David; Olsson, Roy H.; Greth, Karl Douglas; Young, Travis Ryan; Nguyen, Janet; Stevens, James E.

Issue Date:

2015-12-01

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1228380

Patent Number(s):

9203134

Application Number:

13/780,285

Assignee:

Sandia Corporation

Patent Classifications (CPCs):

H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01P - WAVEGUIDES

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H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS

H03H2003/0478 - {in a process for mass production}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01P - WAVEGUIDES

H01P11/007 - {Manufacturing frequency-selective devices

H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS

H03H3/0077 - {by tuning of resonance frequency}
H03H3/04 - for obtaining desired frequency or temperature coefficient
H03H9/02228 - {Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer}

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Feb 28

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY