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Title: Conductivity based on selective etch for GaN devices and applications thereof

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1228370
Assignee:
Yale University NETL
Patent Number(s):
9,206,524
Application Number:
13/559,199
Contract Number:
FC26-07NT43227
Resource Relation:
Patent File Date: 2012 Jul 26
Research Org:
Yale Univ., New Haven, CT (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

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