Tuning and synthesis of semiconductor nanostructures by mechanical compression
Abstract
A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1226543
- Patent Number(s):
- 9187646
- Application Number:
- 13/905,959
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C09 - DYES C09C - TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES
B - PERFORMING OPERATIONS B05 - SPRAYING OR ATOMISING IN GENERAL B05D - PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 May 30
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Fan, Hongyou, and Li, Binsong. Tuning and synthesis of semiconductor nanostructures by mechanical compression. United States: N. p., 2015.
Web.
Fan, Hongyou, & Li, Binsong. Tuning and synthesis of semiconductor nanostructures by mechanical compression. United States.
Fan, Hongyou, and Li, Binsong. Tue .
"Tuning and synthesis of semiconductor nanostructures by mechanical compression". United States. https://www.osti.gov/servlets/purl/1226543.
@article{osti_1226543,
title = {Tuning and synthesis of semiconductor nanostructures by mechanical compression},
author = {Fan, Hongyou and Li, Binsong},
abstractNote = {A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {11}
}
Works referenced in this record:
High-Pressure Structural Transformations in Semiconductor Nanocrystals
journal, October 1995
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Nanostructured Gold Architectures Formed through High Pressure-Driven Sintering of Spherical Nanoparticle Arrays
journal, September 2010
- Wu, Huimeng; Bai, Feng; Sun, Zaicheng
- Journal of the American Chemical Society, Vol. 132, Issue 37
Pressure-Driven Assembly of Spherical Nanoparticles and Formation of 1D-Nanostructure Arrays
journal, July 2010
- Wu, Huimeng; Bai, Feng; Sun, Zaicheng
- Angewandte Chemie International Edition, Vol. 49, Issue 45, p. 8431-8434
Pressure-induced morphology-dependent phase transformations of nanostructured tin dioxide
journal, September 2009
- Dong, Zhaohui; Song, Yang
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