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Title: Power spectrum analysis for defect screening in integrated circuit devices

Abstract

A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1226447
Patent Number(s):
9188622
Application Number:
13/309,281
Assignee:
SSO
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION

Citation Formats

Tangyunyong, Paiboon, Cole Jr., Edward I., and Stein, David J. Power spectrum analysis for defect screening in integrated circuit devices. United States: N. p., 2011. Web.
Tangyunyong, Paiboon, Cole Jr., Edward I., & Stein, David J. Power spectrum analysis for defect screening in integrated circuit devices. United States.
Tangyunyong, Paiboon, Cole Jr., Edward I., and Stein, David J. Thu . "Power spectrum analysis for defect screening in integrated circuit devices". United States. https://www.osti.gov/servlets/purl/1226447.
@article{osti_1226447,
title = {Power spectrum analysis for defect screening in integrated circuit devices},
author = {Tangyunyong, Paiboon and Cole Jr., Edward I. and Stein, David J.},
abstractNote = {A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {12}
}

Patent:

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