Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Full Record
Other Related Research

Abstract

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Inventors:: Lagally, Max G.; Evans, Paul G.; Ritz, Clark S.

Issue Date:: 2015-11-17

Research Org.:: WISCONSIN ALUMNI RESEARCH FOUNDATION, Madison, WI (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1226078

Patent Number(s):: 9,181,092

Application Number:: 13/945,171

Assignee:: WISCONSIN ALUMNI RESEARCH FOUNDATION

DOE Contract Number:: FG02-03ER46028

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013 Jul 18

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Lagally, Max G., Evans, Paul G., and Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same.  United States: N. p., 2015. 
        Web.

Copy to clipboard


                    Lagally, Max G., Evans, Paul G., & Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same.  United States.

Copy to clipboard


                    Lagally, Max G., Evans, Paul G., and Ritz, Clark S. Tue .  
        "Semiconductor nanowire thermoelectric materials and devices, and processes for producing same".  United States.  https://www.osti.gov/servlets/purl/1226078.

Copy to clipboard


                    
@article{osti_1226078,

  title        = {Semiconductor nanowire thermoelectric materials and devices, and processes for producing same},

  author       = {Lagally, Max G. and Evans, Paul G. and Ritz, Clark S.},

  abstractNote = {The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {11}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Patent Lagally, Max G [Madison, WI]; Evans, Paul G [Madison, WI]; Ritz, Clark S [Middleton, WI]

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."
Full Text Available
Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Patent Lagally, Max G; Evans, Paul G; Ritz, Clark S

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."
Full Text Available
Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires

Patent Boukai, Akram; Bunimovich, Yuri; Goddard, William A.; ...

Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.
Full Text Available
Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same

Patent Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; ...

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithographymore »« less
Full Text Available
P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

Patent Guha, Subhendu [Troy, MI]; Ovshinsky, Stanford R [Bloomfield Hills, MI]

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.
Full Text Available

Similar Records