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Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Abstract

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Inventors:
; ;
Issue Date:
Research Org.:
WISCONSIN ALUMNI RESEARCH FOUNDATION, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1226078
Patent Number(s):
9181092
Application Number:
13/945,171
Assignee:
WISCONSIN ALUMNI RESEARCH FOUNDATION
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jul 18
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Lagally, Max G., Evans, Paul G., and Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same. United States: N. p., 2015. Web.
Lagally, Max G., Evans, Paul G., & Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same. United States.
Lagally, Max G., Evans, Paul G., and Ritz, Clark S. Tue . "Semiconductor nanowire thermoelectric materials and devices, and processes for producing same". United States. https://www.osti.gov/servlets/purl/1226078.
@article{osti_1226078,
title = {Semiconductor nanowire thermoelectric materials and devices, and processes for producing same},
author = {Lagally, Max G. and Evans, Paul G. and Ritz, Clark S.},
abstractNote = {The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {11}
}

Works referenced in this record:

Nanoscale patterning for the formation of extensive wires
patent, September 2001


Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
patent-application, July 2005