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Title: Photoconductive switch package

Abstract

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

Inventors:
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1224426
Patent Number(s):
9171988
Application Number:
14/047,643
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Oct 07
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION; 14 SOLAR ENERGY

Citation Formats

Caporaso, George J. Photoconductive switch package. United States: N. p., 2015. Web.
Caporaso, George J. Photoconductive switch package. United States.
Caporaso, George J. Tue . "Photoconductive switch package". United States. https://www.osti.gov/servlets/purl/1224426.
@article{osti_1224426,
title = {Photoconductive switch package},
author = {Caporaso, George J.},
abstractNote = {A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}

Works referenced in this record:

High speed photodetector
patent, April 1982


Bulk semiconductor switch
patent, March 1984


Method of biasing a photoconductive detector and detector apparatus therefor
patent, August 1985


Multiple gap optically activated switch
patent, December 1986


Optically switched microwave pulse generator
patent, April 1989


High power photoconductor bulk GaAs switch
patent, July 1991


Pulse sharpening using an optical pulse
patent, June 1994


Photoconductive switch
patent, July 2001


Optically initiated silicon carbide high voltage switch
patent, February 2011


Optically-initiated silicon carbide high voltage switch
patent, February 2012


Photoconductive switch package
patent, October 2013


High voltage photo switch package module
patent, February 2014


Optically Initiated Silicon Carbide High Voltage Switch
patent-application, April 2007


System and Method of Modulating Electrical Signals Using Photoconductive Wide Bandgap Semiconductors as Variables Resistors
patent-application, October 2009


Photoconductive Switch Package
patent-application, November 2010