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Title: Method of forming contacts for a back-contact solar cell

Abstract

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Inventors:
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1223691
Patent Number(s):
9166079
Application Number:
14/302,254
Assignee:
SunPower Corporation (San Jose, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jun 11
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Manning, Jane. Method of forming contacts for a back-contact solar cell. United States: N. p., 2015. Web.
Manning, Jane. Method of forming contacts for a back-contact solar cell. United States.
Manning, Jane. Tue . "Method of forming contacts for a back-contact solar cell". United States. https://www.osti.gov/servlets/purl/1223691.
@article{osti_1223691,
title = {Method of forming contacts for a back-contact solar cell},
author = {Manning, Jane},
abstractNote = {Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}

Works referenced in this record:

Back side contact solar cell structures and fabrication processes
patent, October 2010


Solar cell and method for fabricating the same
patent-application, October 2002


Process and fabrication methods for emitter wrap through back contact solar cells
patent-application, March 2006


Transgenic monocot plants encoding beta-glucosidase and xylanase
patent-application, August 2009


Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
patent-application, December 2009