Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
Abstract
A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
- Inventors:
- Issue Date:
- Research Org.:
- The University of Massachusetts, Boston, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1223115
- Patent Number(s):
- 9156682
- Application Number:
- 13/480,506
- Assignee:
- The University of Massachusetts (Boston, MA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B05 - SPRAYING OR ATOMISING IN GENERAL B05D - PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- DOE Contract Number:
- FG02-96ER45612
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 May 25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Russell, Thomas P., Hong, Sung Woo, Lee, Doug Hyun, Park, Soojin, and Xu, Ting. Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles. United States: N. p., 2015.
Web.
Russell, Thomas P., Hong, Sung Woo, Lee, Doug Hyun, Park, Soojin, & Xu, Ting. Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles. United States.
Russell, Thomas P., Hong, Sung Woo, Lee, Doug Hyun, Park, Soojin, and Xu, Ting. Tue .
"Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles". United States. https://www.osti.gov/servlets/purl/1223115.
@article{osti_1223115,
title = {Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles},
author = {Russell, Thomas P. and Hong, Sung Woo and Lee, Doug Hyun and Park, Soojin and Xu, Ting},
abstractNote = {A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 13 00:00:00 EDT 2015},
month = {Tue Oct 13 00:00:00 EDT 2015}
}
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Orientation of self-assembled block copolymer cylinders perpendicular to electric field in mesoscale film
journal, February 2003
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Semiconductor Nanowires: From Self-Organization to Patterned Growth
journal, April 2006
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Observed Substrate Topography-Mediated Lateral Patterning of Diblock Copolymer Films
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